Epitaxial growth of trilayer graphene moiré superlattice  

作　　者：袁亚龙 褚衍邦 胡成 田金朋 刘乐 吴帆帆 季怡汝 赵交交 黄智恒 昝晓洲 杜罗军 Kenji Watanabe Takashi Taniguchi 时东霞 史志文 杨威 张广宇 Yalong Yuan;Yanbang Chu;Cheng Hu;Jinpeng Tian;Le Liu;Fanfan Wu;Yiru Ji;Jiaojiao Zhao;Zhiheng Huang;Xiaozhou Zan;Luojun Du;Kenji Watanabe;Takashi Taniguchi;Dongxia Shi;Zhiwen Shi;Wei Yang;Guangyu Zhang(Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences(CAS),Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China;Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China;Research Center for Functional Materials,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan;International Center for Materials Nanoarchitectonics,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences(CAS),Beijing 100190,China [2]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China [3]Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China [4]Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China [5]Research Center for Functional Materials,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan [6]International Center for Materials Nanoarchitectonics,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan [7]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics B》2023年第7期510-514,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China (Grant No. 2020YFA0309600);the National Natural Science Foundation of China (Grant Nos. 61888102, 11834017, and 12074413);the Strategic Priority Research Program of CAS (Grant Nos. XDB30000000 and XDB33000000);the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001);support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001);JSPS KAKENHI (Grant Nos. 19H05790, 20H00354, and 21H05233), and A3 Foresight by JSPS

摘　　要：The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene(TLG) moiré superlattice on hexagonal boron nitride(h BN) by a remote plasma-enhanced chemical vapor deposition method. The as-grown TLG/h BN shows a uniform moiré pattern with a period of ~ 15 nm by atomic force microscopy(AFM) imaging, which agrees with the lattice mismatch between graphene and h BN. By fabricating the device with both top and bottom gates, we observed a gate-tunable bandgap at charge neutral point(CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron–electron correlation in our grown TLG/h BN superlattice. In addition, we observed quantum Hall states at Landau level filling factors ν = 6, 10, 14,..., indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.

关 键 词：epitaxial growth ABC-TLG/hBN moirésuperlattice electron correlations 

分 类 号：TN304.054[电子电信—物理电子学] TQ127.11[化学工程—无机化工]