Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode  

作　　者：曾美玲 汪洋 金湘亮 彭艳 罗均 Mei-Ling Zeng;Yang Wang;Xiang-Liang Jin;Yan Peng;Jun Luo(School of Physics and Electronics,Hunan Normal University,Changsha 410081,China;School of Mechatronic Engineering and Automation,Shanghai University,Shanghai 200444,China)

机构地区：[1]School of Physics and Electronics,Hunan Normal University,Changsha 410081,China [2]School of Mechatronic Engineering and Automation,Shanghai University,Shanghai 200444,China

出　　处：《Chinese Physics B》2023年第7期564-569,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62174052 and 61827812);Hunan Science and Technology Department Huxiang High-level Talent Gathering Project(Grant No.2019RS1037);Innovation Project of Science and Technology Department of Hunan Province(Grant No.2020GK2018);Postgraduate Scientific Research Innovation Project of Hunan Province(Grant No.QL20210131).

摘　　要：This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions,and the photocapacitance exhibits frequency-dependent characteristics.Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process,this study attributes the above results to the interfacial traps formed by Si-SiO_(2),and the illumination can effectively reduce the interfacial trap lifetime,leading to changes in the junction capacitance inside the SPAD.Accordingly,an equivalent circuit model considering the photocapacitance effect is also proposed in this paper.Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.

关 键 词：photocapacitance effect single-photon avalanche diode interfacial traps 

分 类 号：TN312.7[电子电信—物理电子学]