8~11GHz 200W GaN内匹配功率管  

8-11 GHz 200W GaN internal matching power transistors

作　　者：韩青峰 唐世军 成爱强 王帅 HAN Qingfeng;TANG Shijun;CHENG Aiqiang;WANG Shuai(The 55th Research Institute,China Electronics Technology Group Corporation,Nanjing 210016,China)

机构地区：[1]中国电子科技集团有限公司第五十五研究所,南京210016

出　　处：《兵器装备工程学报》2023年第7期275-280,共6页Journal of Ordnance Equipment Engineering

摘　　要：高输出功率氮化镓高电子迁移率晶体管(GaNHEMT)已广泛开发用于X波段雷达应用,为了应对雷达系统集成化与一体化发展对功率放大器宽频带、高功率工作能力的需求,基于南京电子器件研究所0.5μm GaN HEMT工艺平台,研制了一款8.0~11.0 GHz宽带200 W内匹配功率管。该器件内部包含4只10.8 mmGaN HEMT管芯,通过L-C网络降低管芯虚部阻抗,并使用多级微带阻抗变换器进行宽带阻抗变换和功率分配/合成,实现宽带50Ω阻抗匹配。该器件在8.0~11.0 GHz频带内,于漏极电压40 V、脉冲宽度100μs、占空比10%测试条件下,输出功率超过200 W,功率附加效率高于37.3%,功率增益大于8 dB,并在频带内获取了峰值输出功率263 W、最佳功率附加效率43.1%和最大功率增益9.2 dB,是X波段相关报道中,国内外首次实现在8.0~11.0 GHz频带范围内输出功率达到200 W以上。High output power gallium nitride(GaN) high electron mobility transistors(HEMTs) have been widely developed for X-band radar application.In order to meet the requirement of wide-band and high power capabilities of power amplifiers in the integrated development of the radar system,this paper develops a wide-band 200 W internal matching power transistor of 8.0 to 11.0 GHz based on the 0.5 μm GaN HEMT process platform of Nanjing Institute of Electronic Devices.Four 10.8 mm GaN HEMT cores are included inside the device.L-C network is utilized to reduce virtual impedance of the core,and then wide-band impedance transformation and power distribution/synthesis are carried by a multi-stage microstrip line impedance transformer to realize wide-band 50 Ω impedance matching.During the operating frequency band from 8.0 to 11.0 GHz,under the drain voltage of 40 V,the pulse width of 100 μs and the duty cycle of 10%,the in-band output power is more than 200 W,the power additional efficiency(PAE) exceeds 37.3%,and the power gain is greater than 8 dB.In addition,the in-band peak output power is 263 W,the optimal PAE is 43.1%,and the maximum power gain reaches 9.2 dB.It is the first time to achieve an output power of more than 200 W in the range of 8.0 to 11.0 GHz in X-band related reports at home and abroad.

关 键 词：氮化镓高电子迁移率晶体管 内匹配 功率放大器 X波段 宽带 

分 类 号：TN722[电子电信—电路与系统]