一种10~20GHz宽带二倍频放大芯片设计  

Design of a Wideband Frequency Doubler Covering 10~20 GHz

作　　者：傅琦 高显[1] FU Qi;GAO Xian(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《通信电源技术》2023年第8期22-24,共3页Telecom Power Technology

摘　　要：基于砷化镓赝配高电子迁移率晶体管(pseudomorphic High Electron Mobility Transistor,pHEMT)工艺,进行了覆盖10~20 GHz宽带二倍频放大芯片的设计,着重分析了在本振链路中基波和三次谐波产生的原因和抑制方法。基于差分电路,设计了一款不含滤波器且基波频率为10~20 GHz宽带二倍频放大芯片。该芯片通过探针台在片测试,证实在工作频带内,基波和三次谐波抑制均优于35 dBc,倍频损耗优于-0.5 dB。Based on gallium arsenide pseudomorphic High Eleotron Mobility Transistor(pHEMT)process,a broadband double frequency amplifier chip covering 10~20 GHz is designed.The causes and suppression methods of fundamental and third harmonics in the local oscillator link are analyzed.Based on differential circuit,a broadband double frequency amplifier chip with 10~20 GHz fundamental frequency is designed.The chip was tested online by the probe station,and the suppression of fundamental wave and third harmonic wave in the working band was better than,and the loss of frequency doubling was better than-0.5 dB.

关 键 词：砷化镓 二倍频放大芯片 差分电路 

分 类 号：TN722.75[电子电信—电路与系统] TN40