基于GaAs工艺的L波段收发多功能芯片设计  

Design of L-Band Transceiver Multi-Function GaAs MMIC

作　　者：高显[1] 戴剑[1] 傅琦 GAO Xian;DAI Jian;FU Qi(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《通信电源技术》2023年第8期74-76,80,共4页Telecom Power Technology

摘　　要：基于0.15μm GaAs伪形态高电子迁移率晶体管(Pseudomorphic High Eleotron Mobility Transistor,PHEMT)工艺,设计了一款L波段收发多功能芯片。芯片内部集成6位数控衰减器、6位数控延时器、接收放大器、发射放大器、单刀双掷开关及数字驱动电路。经测试得到,接收通道增益大于3 dB,1 dB压缩输入功率大于3 dBm,噪声系数小于4 dB,64态衰减精度均方根(Root Mean Square,RMS)小于0.6 dB,64态延时精度RMS小于8 ps;发射通道增益大于24 dB,饱和输出功率大于23 dBm,64态延时精度RMS小于8.7 ps。芯片尺寸为4.00 mm×4.00 mm×0.07 mm。Based on 0.15μm GaAs Pseudomorphic High Eleotron Mobility Transistor(PHEMT)technology,a L band transceiver multifunctional chip was designed.The chip is integrated with 6-bit CNC attenuator,6-bit CNC delay device,receiving amplifier,transmitting amplifier,single-pole double-throw switch and digital drive circuit.The results show that the gain of receiving channel is greater than 3 dB,the input power of 1 dB compression is greater than 3 dBm,the noise factor is less than 4 dB,the Root Mean Square(RMS)of 64-state attenuation accuracy is less than 0.6 dB,and the 64-state delay accuracy is less than 8 ps.The transmitting channel gain is greater than 24 dB,the saturated output power is greater than 23 dBm,and the 64-state delay accuracy RMS is less than 8.7 ps.The chip size is 4.00 mm×4.00 mm×0.07 mm.

关 键 词：收发多功能芯片 L波段 GaAs PHEMT工艺 衰减器 

分 类 号：TN722[电子电信—电路与系统]