基于近场静电雾化工艺制备ZnO薄膜及其紫外光电探测性能  

Preparation of ZnO thin film by near-field electrospray and its ultraviolet photoelectric detection performance

作　　者：姜佳昕 王翔 郑高峰 李文望 JIANG Jiaxin;WANG Xiang;ZHENG Gaofeng;LI Wenwang(School of Mechanical and Automotive Engineering,Key Laboratory of Precision Actuation and Transmission of Fujian Province University,Xiamen Key Laboratory of Robot Systems and Digital Manufacturing,Xiamen University of Technology,Xiamen 361024,China;Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University,Xiamen 361102,China)

机构地区：[1]厦门理工学院机械与汽车工程学院,精密驱动与传动福建省高校重点实验室,厦门市机器人系统与数字制造重点实验室,福建厦门361024 [2]厦门大学萨本栋微米纳米科学技术研究院,福建厦门361102

出　　处：《厦门大学学报（自然科学版）》2023年第4期533-538,共6页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金(52275575);福建省中青年教师教育科研项目(JAT220338);福建省科技计划项目(2022H6036,2021J011196);厦门理工学院高层次人才科研启动项目(YKJ22038R)。

摘　　要：氧化锌(ZnO)光电敏感薄膜的精确喷印是集成制造的关键.本文采用近场静电雾化工艺制备ZnO光电敏感薄膜,通过缩短喷头至收集板距离,并缩小薄膜的沉积区域线宽,使纳米颗粒均匀分布在150~250μm线宽内.考察了不同喷印工艺对薄膜结构的影响.喷印次数增加,薄膜内的纳米颗粒分布密度增加,纳米颗粒间形成连续均匀分布,薄膜沉积线宽随施加电压和喷头至收集板距离的增大而增大.测试了不同ZnO薄膜结构对紫外光电探测器性能的影响,当紫外光强为3500 mW/cm 2时,响应光电流可达464μA,为暗电流的266.7倍,表现出了良好的光电探测性能,并具有良好的稳定性和可重复性.The precise printing of ZnO photosensitive thin films is the key to the integration manufacturing of photodetectors.In this paper,ZnO photosensitive thin films have been printed by the near-field electrospray technology.By shortening the distance between the nozzle and the collecting plate,line widths of the printed film are reduced,and nanoparticles are evenly distributed in the line width ranging within 150-250μm.Furthermore,effects of the electrospray process on the film structure have been investigated.With the increase of printing times,the distribution density of nanoparticles in the film increases,and the continuous and uniform nanoparticle distribution is formed.The line width of the printed film increases as the applied voltage and the distance between the nozzle and the collecting plate increase.The photodetector performance has been tested so that the effect of ZnO film structure on the ultraviolet photodetection performance can be further understood.At the ultraviolet light intensity of 3500 mW/cm^(2),the response photocurrent can reach 464μA,which equals 266.7 times of the dark current,implying satisfactory photodetection performances as well as high stabilities and repeatabilities.

关 键 词：近场静电雾化 紫外光电探测器 ZNO 微纳薄膜 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]