硅通孔技术可靠性技术概述  

Review on Reliability Techniques of Through-Silicon-Via Technology

作　　者：刘倩 邱忠文[1] 李胜玉 LIU Qian;QIU Zhong-wen;LI Sheng-yu(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《环境技术》2023年第6期128-132,共5页Environmental Technology

摘　　要：为了响应集成电路行业更高速、更高集成度的要求,硅通孔技术(ThroughSiliconVia,TSV)成为了半导体封装核心技术之一,解决芯片垂直方向上的电气和物理互连,减小器件集成尺寸,实现封装小型化。本文介绍了硅通孔技术的可靠性,包括热应力可靠性和工艺技术可靠性两方面。过大热应力可能会导致通孔侧壁粗糙,并影响内部载流子迁移率,从而使器件功能失效。可以通过采用热硅通孔、浅层沟槽隔离技术、合理调整通孔结构和深宽比来减小热应力。TSV工艺可靠性主要体现在通孔侧壁光滑程度和通孔导电材料填充效果,可通过循环氧化、在电镀液中加入抑制剂和加速剂以及熔融法进行改善。In order to respond to the more hi gh-speed,hi gher integration requirements of integrated circuit industry,through silicon via technology(TSV)has become one of the core technologies of semi conductor advanced packaging,which can solve the electrical interconnection in the vertical direction of chips,and realize the miniaturization of device integration.This paper introduces the reliability of through silicon via technology,including thermal stress reliability and process technology reliability.Excessive thermal stress may lead to rough side wall and affect internal carrier mobility,thus making the device functional failure.The thermal stress can be reduced by us ing the thermal through silicon via、the shallow trench isolation technology,reasonable adjustment of the structure and depth to width ratio of TSV.The process reliability of TSV is mainly reflected in the.smoothness of the side wall and the filling effect of the conductive materials,which can be improved by cyclic oxidation,adding inhibitors and accelerators in electroplating solution and melting method.

关 键 词：硅通孔技术 可靠性 热应力 扇贝纹 

分 类 号：TN406[电子电信—微电子学与固体电子学]