基于HBT工艺的低三阶交调失真射频放大器优化设计  

Optimization Design of HBT Based RF Amplifiers with Low Intermodulation

作　　者：熊翼通 喻阳 蒲颜 张峪铭 王国强[1] XIONG Yitong;YU Yang;PU Yan;ZHANG Yuming;WANG Guoqiang(The 24th Research Institute of China Electronics Technology Group Corp.,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2023年第2期255-260,共6页Microelectronics

摘　　要：针对宽带大信号容量无线系统对低三阶交调失真射频放大器的迫切需求,从放大器偏置点优化和片上散热优化两个方面研究了基于HBT工艺的低三阶交调失真射频放大器优化设计方法。分析了达林顿复合结构射频放大器交调特性与直流偏置点的关系,给出了放大器最佳三阶交调直流偏置点。提出了一种优化散热的输出级分散布局电路结构,减小了片上温升带来的三阶交调性能恶化。应用提出的优化设计理论方法,基于2μm AlGaAs/GaAs HBT工艺,设计了一款工作于0.05~1 GHz的低三阶交调失真射频放大器。测试结果表明,该放大器实现了42.1 dBm的输出三阶交调点,三阶交调与1 dB压缩点之比达到了21.2 dB。Aiming at the urgent needs of low 3rd order intermodulation distortion RF amplifiers in wideband large signal capacity wireless systems,this paper presents the optimization design methods of HBT based low 3rd order intermodulation distortion RF amplifiers from two aspects:amplifier bias point optimization and on-chip thermal optimization.The relationship between intermodulation and DC bias condition of Darlington configured RF amplifier was investigated.The DC bias point for optimum 3rd order intercept point(IP_(3))was obtained.An on-chip heat dissipation optimization circuit structure and a distributed layout were proposed to further improve the IP_(3).Based on the proposed optimization scheme,a O.05-1 GHz RF amplifier with low intermodulation was designed in a 2μm AIGaAs/GaAs HBT process.The tested results show that the amplifier exhibits an output IP:of 42.1 dBm.The point ratio of IP3-1 dB compression reaches 21.2 dB.

关 键 词：HBT 射频放大器 三阶交调 

分 类 号：TN431[电子电信—微电子学与固体电子学] TN722