碳纳米管场效应晶体管紧凑模型研究进展  

Research Progress of Compact Models for Carbon Nanotube Field Effect Transistors

作　　者：杨可 左石凯 王尘 蒋见花 陈铖颖 YANG Ke;ZUO Shikai;WANG Chen;JIANG Jianhua;CHEN Chengying(School of Opto-Electronic and Com munication Engineering,Xiamen University of Technology,Xiamen,Fujian 361024,P.R.China;School of Electronics,Peking University,Beijing 100871,P.R.China)

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024 [2]北京大学电子学院,北京100871

出　　处：《微电子学》2023年第2期286-294,共9页Microelectronics

基　　金：国家自然科学基金资助项目(61704143,61904155);福建省自然科学基金面上项目(2020J01295);厦门市2020年青年创新基金资助项目(3502Z20206074);厦门市重大科技项目(3502Z20221022)。

摘　　要：随着摩尔定律逼近极限,碳纳米管场效应晶体管(CNTFET)被认为是5 nm以下CMOS晶体管的有力替代者。CNTFET具有准一维结构,栅极可有效控制导电沟道的导通/关断;同时,载流子在沟道内可实现近弹道输运,具有极高的迁移率。因此,CNTFET在低电压环境下,可提供较大的电流传输能力,为实现纳米级超大规模模拟/逻辑电路提供了解决方案。文章综述了CNTFET紧凑模型的发展现状,分析了现阶段面临的漏极电流精确模型、隧穿效应、寄生效应、多纳米管模型等存在的问题,重点探讨了针对这些问题的解决方案。最后对该紧凑模型未来的应用前景进行了讨论。With Moore's law approaching the limit,Carbon Nanotube Field Effect Transistor(CNTFET)is considered to be a powerful substitute for CMOS transistors below 5 nm.The CNTFET has a quasi one-dimensional structure,and the gate can effectively control the on/off of the conductive channel.At the same time,the carrier can realize ballistic transport in the channel,and has a very high mobility.Therefore,CNTFET can provide large curent transmission capacity in low voltage environment,which provides a solution for the implementation of nano scale ultra large-scale analog/logic circuits.This paper summarizes the development status of CNTFET compact model,analyzes the problems faced at this stage,such as accurate drain current model,tunneling effect,parasitic effect and multi-nanotube model,and focuses on the solutions to the above problems.At the end,the future application prospect of the compact model is discussed.

关 键 词：碳纳米管 漏极电流 隧穿效应 寄生效应 紧凑模型 

分 类 号：TN386[电子电信—物理电子学]