IGBT小电流开通失效研究及结构改进  

Research on IGBT Turn on Failure at Small Current and Structure Improvement

作　　者：周东海 童颜 陈英毅 刘建 ZHOU Dong-hai;TONG Yan;CHEN Ying-yi;LIU Jian(Nari Group(State Grid Electric Power Research Institute)Co.,Ltd.,Nanjing 211106,China;不详)

机构地区：[1]南瑞集团(国网电力科学研究院)有限公司,江苏南京211106 [2]南瑞联研半导体有限责任公司,江苏南京211100 [3]国网江苏电力有限公司电力科学研究院,江苏南京211100

出　　处：《电力电子技术》2023年第7期134-136,共3页Power Electronics

基　　金：国家电网有限公司总部管理科技项目资助(SGSXJX00AZJS2100176)。

摘　　要：对绝缘栅双极型晶体管(IGBT)在小电流开关测试失效进行了分析研究,对IGBT栅极和集电极的电压电流波形监测发现,IGBT在小电流开通时电压电流波形存在严重的振荡问题,电压幅值超过器件最大额定值,导致器件失效。分析了IGBT芯片电容和栅极电阻对小电流开通振荡的影响,通过对IGBT芯片结构进行改进,将小电流振荡抑制在安全值范围内,解决了IGBT小电流开通失效问题,改进后的IGBT器件性能参数和应用测试温升接近国外竞品。The failure of insulated gate bipolar translator(IGBT)switching test at small current is analyzed and stud-ied.By monitoring the voltage and current waveform of IGBT gate and collector,a serious oscillation problem of IGBT voltage and current waveform is founded when the ICBT is turned on at small current.The voltage amplitude exceeds the maximum rated value of the voltage,resulting in device failure.The effect of adjusting the capacitance and gate resistance of IGBT chip on the turn on waveform oscillation at small current is analyzed.Through the improvement of IGBT chip structure,the turn on speed of IGBT is slowed down,the oscillation caused by small current is limited in the safe range and the switching test failure problem of ICBT at small current is solved.The improved ICBT device performance parameters and temperature rise at application test are close to foreign competitors.

关 键 词：绝缘栅双极型晶体管 开通失效 结构改进 

分 类 号：TN3[电子电信—物理电子学]