原子层沉积法制备ZnO薄膜晶体管教学研究  

Teaching Research on Preparation of ZnO Thin Film Transistor by Atomic Layer Deposition

作　　者：陈雪 吴宏伟 CHENG Xue;WU Hongwei(School of Mechanics and Photoelectric Physics,Anhui University of Science and Technology,Huainan 232001,China)

机构地区：[1]安徽理工大学力学与光电物理学院,安徽淮南232001

出　　处：《牡丹江师范学院学报（自然科学版）》2023年第3期73-77,共5页Journal of Mudanjiang Normal University：Natural Sciences Edition

基　　金：国家自然科学基金项目(11904008);安徽省线上课程“半导体物理学”建设项目(2021xskc017);安徽理工大学高层次人才引进基金项目(2021yjrc24);安徽省教育厅重点项目(2022AH050850)。

摘　　要：采用原子层沉积法制备ZnO薄膜晶体管,研究高温退火对其性能的影响,并将其引入半导体物理课程教学,让学生更加直观了解半导体的样品制备和测试分析,更加有效地培养学生的探索创新精神.ZnO thin film transistors were prepared by atomic layer deposition and the effect of high temperature annealing on their properties was studied.By introducing these research processes into the teaching process of semiconductor physics,students can have a more intuitive understanding of the preparation,testing and analysis of semiconductor sam ples,and cultivate their spirit of exploration and innovation more effectively.

关 键 词：电子器件 半导体物理 后处理 

分 类 号：G642[文化科学—高等教育学]