A Convergent Understanding of Charged Defects  

作　　者：Shashwat Anand Michael Y.Toriyama Chris Wolverton Sossina M.Haile G.Jeffrey Snyder 

机构地区：[1]Department of Materials Science and Engineering,Northwestern University,Evanston,Illinois 60208,United States [2]Materials Sciences Division,Lawrence Berkeley National Laboratory,Berkeley,California 94720,United States

出　　处：《Accounts of Materials Research》2022年第7期685-696,共12页材料研究述评（英文）

基　　金：support of award 70NANB19H005 from U.S.Department of Commerce,National Institute of Standards and Technology as part of the Center for Hierarchical Materials Design(CHiMaD);M.Y.T.is funded by the United States Department of Energy through the Computational Science Graduate Fellowship(DOE CSGF)under grant number DESC0020347;We thank Kent J.Griffith for discussion and wording regarding battery materials.We especially thank Eric S.Toberer for inputs on the organization of the paper;We thank Vladan Stevanovic,Elif Ertekin,and James P.Male for helpful discussions and NSF DMREF project(award no.1729487).

摘　　要：CONSPECTUS:Historically,defects in semiconductors and ionic conductors have been studied using very different approaches.In the solid-state ionics community,nonstoichiometry and defect thermochemistry are often probed directly through experiments.The dependency of defect concentrations on chemical conditions(typically oxygen pressure)are modeled using a physical chemistry framework and compactly represented by the well-known Brouwer diagrams.

关 键 词：DEFECT CHEMISTRY IONIC 

分 类 号：O17[理学—数学]