Resonant Tender X‑ray Scattering of Organic Semiconductors  

作　　者：Christopher R.McNeill 

机构地区：[1]Department of Materials Science and Engineering,Monash University,Clayton,Victoria 3800,Australia

出　　处：《Accounts of Materials Research》2023年第1期16-26,共11页材料研究述评（英文）

基　　金：C.R.M.thanks Dean Delongchamp at NIST for hosting his Outside Studies Program in 2019 from which this work found its genesis.C.R.M.also acknowledges Eliot Gann(NIST)for first suggesting sulfur edge experiments and Guillaume Freychet(NSLS-II)for his willingness to measure samples and his hard work at the beamline through the pandemic.C.R.M.also thanks Lee Richter(NIST)for probing discussions.

摘　　要：CONSPECTUS: Organic semiconductors are an important class ofmaterial with application in a wide range of devices including organiclight emitting diodes (OLEDs), organic field-effect transistors(OFETs), organic solar cells, and organic thermoelectrics. Theperformance of organic semiconductor devices is strongly linked tothin film microstructure. As such, much research in the field is devotedto controlling and characterizing the microstructure of organicsemiconductor thin films. The microstructure of organic semiconductorthin films in general, however, is challenging to characterize,as they have a level of disorder that often hinders the application ofstandard techniques for structural analysis. As organic materials, theyalso weakly interact with electron and X-ray beams, with thin filmsadditionally having a small volume of material to interrogate. Advances in the development of synchrotron beamlines are nowenabling the utilization of so-called “tender” X-rays for studying complex thin film organic samples. Tender X-rays have energymidway between hard X-rays (>10 keV or wavelength less than 0.1 nm) and soft X-rays (<1 keV or wavelength longer than ∼1.2nm). Importantly, many heteroatoms found in organic semiconductors such as sulfur, chlorine, and silicon have absorption edges inthe tender X-ray regime, enabling resonant tender X-ray scattering experiments. While resonant soft X-ray scattering (R-SoXS) hasbeen an invaluable technique for the field utilizing the resonant interaction between soft X-rays with organic materials for enhancedscattering contrast (targeting the absorption edges of carbon, oxygen, and nitrogen), R-SoXS is limited by the long wavelength ofsoft X-rays and the strong absorption of soft X-rays by organic films. For quantitative analysis of the energy dependence of resonantscattering, minimizing the contribution due to absorption (and the energy-dependent contribution of X-ray fluorescence to themeasured scattering signal) greatly simplifies the problem. Switching to the tender X-ray regime

关 键 词：SCATTERING RESONANT REGIME 

分 类 号：TN304[电子电信—物理电子学]