Excited state biexcitons in monolayer WSe_(2)driven by vertically grown graphene nanosheets with high-density electron trapping edges  

作　　者：Bo Wen Da-Ning Luo Ling-Long Zhang Xiao-Lin Li Xin Wang Liang-Liang Huang Xi Zhang Dong-Feng Diao 

机构地区：[1]Institute of Nanosurface Science and Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering,Shenzhen University,Shenzhen 518060,China [2]College of Physics,Nanjing University of Aeronautics and Astronautics,Key Laboratory of Aerospace Information Materials and Physics(NUAA),MIIT,Nanjing 211106,China [3]Research Center of Medical Plasma Technology,Shenzhen University,Shenzhen 518060,China

出　　处：《Frontiers of physics》2023年第3期103-112,共10页物理学前沿（英文版）

基　　金：The authors gratefully acknowledge the financial support from the National Natural Science Foundation of China(Nos.62104155,52275565,52005343,and 62204117)of China;the Natural Science Foundation of Guangdong Province(No.2022A1515011667);the financial support from Jiangsu Province Science Foundation for Youths(No.BK20210275);Guangdong Kangyi Special Fund(No.2020KZDZX1173).

摘　　要：Interface engineering in atomically thin transition metal dichalcogenides(TMDs)is becoming an important and powerful technique to alter their properties,enabling new optoelectronic applications and quantum devices.Interface engineering in a monolayer WSe_(2)sample via introduction of high-density edges of standing structured graphene nanosheets(GNs)is realized.A strong photoluminescence(PL)emission peak from intravalley and intervalley trions at about 750 nm is observed at the room temperature,which indicated the heavily p-type doping of the monolayer WSe_(2)/thin graphene nanosheet-embedded carbon(TGNEC)film heterostructure.We also successfully triggered the emission of biexcitons(excited state biexciton)in a monolayer WSe_(2),via the electron trapping centers of edge quantum wells of a TGNEC film.The PL emission of a monolayer WSe_(2)/GNEC film is quenched by capturing the photoexcited electrons to reduce the electron-hole recombination rate.This study can be an important benchmark for the extensive understanding of light–matter interaction in TMDs,and their dynamics.

关 键 词：excited state biexcitons monolayer WSe_(2) vertically graphene electron trapping edges 

分 类 号：TB383[一般工业技术—材料科学与工程] TQ127.11[化学工程—无机化工]