Light response and adsorption interaction of black phosphorus quantum dots and single‑layer graphene phototransistor  

作　　者：Qi Han Yadong Jiang Xianchao Liu Chaoyi Zhang Jun Wang 

机构地区：[1]School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Frontiers of Optoelectronics》2023年第2期15-23,共9页光电子前沿（英文版）

基　　金：supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.61922022,62175026,62171094,and 62104026)。

摘　　要：Black phosphorus quantum dots(BPQDs)are synthesized and combined with graphene sheet.The fabricated BPQDs/graphene devices are capable of detecting visible and near infrared radiation.The adsorption efect of BPQDs in graphene is clarifed by the relationship of the photocurrent and the shift of the Dirac point with diferent substrate.The Dirac point moves toward a neutral point under illumination with both SiO_(2)/Si and Si(3)N_(4)/Si substrates,indicating an anti-doped feature of photo-excitation.To our knowledge,this provides the frst observation of photoresist induced photocurrent in such systems.Without the infuence of the photoresist the device can respond to infrared light up to 980 nm wavelength in vacuum in a cryostat,in which the photocurrent is positive and photoconduction efect is believed to dominate the photocurrent.Finally,the adsorption efect is modeled using a frst-principle method to give a picture of charge transfer and orbital contribution in the interaction of phosphorus atoms and single-layer graphene.

关 键 词：Black phosphorus quantum dots Dirac point PHOTOCONDUCTION Adsoprtion 

分 类 号：O64[理学—物理化学]