Global optimization of process parameters for low-temperature SiN_(x) based on orthogonal experiments  

作　　者：Lian-Qiao Yang Chi Zhang Wen-Lei Li Guo-He Liu Jia-Qi Wu-Ma Jin-Qiang Liu Jian-Hua Zhang 

机构地区：[1]School of Materials Science and Engineering,Shanghai University,Shanghai,200444,People's Republic of China [2]Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai,200072,People's Republic of China [3]Huawei Technologies Co.,Ltd,Shanghai,200120,People's Republic of China

出　　处：《Advances in Manufacturing》2023年第2期181-190,共10页先进制造进展（英文版）

基　　金：financially supported by the National Key Research and Development Program of China(Grant No.2020YFB2008501);Huawei Technologies Co.,Ltd.

摘　　要：Low-temperature silicon nitride(SiNx)films deposited by plasma-enhanced chemical vapor deposition(PECVD)have huge application potential in the flexible display.However,the applicability of SiNx largely depends on the film’s general properties,including flexibility,deposition rate,residual stress,elastic modulus,fracture strain,dielectric constant,refraction index,etc.Process optimization towards specific application by conventional experiment design needs lots of work due to the interaction of muti quality and process parameters.Therefore,an efficient global optimization approach for the process technology was proposed based on the Taguchi orthogonal experiment method considering muti-factor muti-responses.First of all,the Taguchi orthogonal experiment design and analysis was used to rank the influences of main process parameters on the quality characteristics,including radio frequency(RF)power,pressure,silane flow rate,ammonia flow rate and nitrogen flow rate.Then,the global optimization approach was carried out utilizing the multi-response optimizer considering the combination target of film formation rate,residual stress,dielectric constant,elastic modulus,fracture strain,refractive index.Finally,the optimal solution of the SiNx film was finally obtained and verified.

关 键 词：Plasma-enhanced chemical vapor deposition(PECVD) Low-temperature silicon nitride(SiNx) Flexible display Taguchi orthogonal experiment Process optimization 

分 类 号：TB32[一般工业技术—材料科学与工程]