Ka波段高隔离单刀四掷开关芯片  

A High Isolation Ka-Band SP4T Switch Chip

作　　者：屈晓敏 段磊 郭跃伟 崔健 QU Xiaomin;DUAN Lei;GUO Yuewei;CUI Jian(Hebei Bowei Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China)

机构地区：[1]河北博威集成电路有限公司,河北石家庄050200

出　　处：《通信电源技术》2023年第10期11-13,共3页Telecom Power Technology

摘　　要：文章基于赝高电子迁移率晶体管(Pseudomorphic High Electron Mobility Transistor,PHEMT)工艺,设计一款Ka波段单刀四掷反射式开关芯片。为降低芯片插入损耗和提高隔离度,电路选取并联型反射式拓扑结构。同时,为提高工作带宽和减小芯片面积,采用高低阻抗变换线替代50Ω传输线方式匹配阻抗。芯片采用0 V和-5 V电压控制支路开关的导通或关断。芯片尺寸为1.85 mm×1.55 mm。实测结果表明,在28~42 GHz工作频带范围内,输入输出回波损耗小于-10 dB,插入损耗小于3.2 dB,隔离度大于38 dB,实现了开关芯片低插损、高隔离度的优异性能。Based on Pseudomorphic High electron mobility Transistor(PHEMT)technology,this paper designs a Ka band single pole four throw reflective switch chip.To reduce chip insertion loss and improve isolation,a parallel reflective topology structure is selected for the circuit.At the same time,in order to increase the working bandwidth and reduce the chip area,high and low impedance conversion lines are used instead of 50 transmission lines to match the impedance.The chip controls the conduction or shut-off of branch switches through a voltage of 0/-5 V.The chip size is.The actual measurement results show that within the operating frequency range of 28-42,the input and output return loss is less than-10,the insertion loss is less than 3.2,and the isolation degree is greater than 38,achieving excellent performance of low insertion loss and high isolation degree for the switch chip.

关 键 词：赝高电子迁移率晶体管(PHEMT) KA波段 单刀四掷 低插损 高隔离度 

分 类 号：TN32[电子电信—物理电子学]