Realizing n-type CdSb with promising thermoelectric performance  

作　　者：Peng Zhao Honghao Yao Shizhen Zhi Xiaojing Ma Zuoxu Wu Yijie Liu Xinyu Wang Li Yin Zongwei Zhang Shuaihang Hou Xiaodong Wang Siliang Chen Chen Chen Xi Lin Haoliang Liu Xingjun Liu Feng Cao Qian Zhang Jun Mao 

机构地区：[1]School of Materials Science and Engineering,and Institute of Materials Genome&Big Data,Harbin Institute of Technology(Shenzhen),Shenzhen 518055,China [2]School of Science,Harbin Institute of Technology(Shenzhen),Shenzhen 518055,China [3]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Journal of Materials Science & Technology》2023年第13期54-61,共8页材料科学技术（英文版）

基　　金：supported by the Shenzhen Science and Tech-nology Program (No.KQTD20200820113045081);the State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology.J.M.acknowledges the financial support from the National Natural Science Foundation of China (No.52101248);Shenzhen fundamental research projects (No.JCYJ20210324132808020);the start-up funding of Shenzhen,and the start-up funding of Harbin Institute of Technology (Shenzhen).Q.Z.acknowledges the financial support from the National Nat-ural Science Foundation of China (Nos.52172194 and 51971081);the Natural Science Foundation for Distinguished Young Scholars of Guangdong Province of China (No.2020B1515020023);the Natural Science Foundation for Distinguished Young Scholars of Shenzhen (No.RCJC20210609103733073);the Key Project of Shenzhen Fundamental Research Projects (No.JCYJ20200109113418655);F.C.acknowledges the financial support from the National Natural Science Foundation of China (No.51871081);H.L.acknowledges the financial support from the National Natural Science Foundation of China (No.62174044).

摘　　要：Realizing high performance in both n-type and p-type materials is essential for designing efficient ther-moelectric devices.However,the doping bottleneck is often encountered,i.e.,only one type of conduction can be realized.As one example,p-type CdSb with high thermoelectric performance has been discovered for several decades,while its n-type counterpart has rarely been reported.In this work,the calculated band structure of CdSb demonstrates that the valley degeneracy is as large as ten for the conduction band,and it is only two for the valence band.Therefore,the n-type CdSb can potentially realize an ex-ceptional thermoelectric performance.Experimentally,the n-type conduction has been successfully real-ized by tuning the stoichiometry of CdSb.By further doping indium at the Cd site,an improved room-temperature electron concentration has been achieved.Band modeling predicts an optimal electron con-centration of∼2.0×1019 cm−3,which is higher than the current experimental values.Therefore,future optimization of the n-type CdSb should mainly focus on identifying practical approaches to optimize the electron concentration.

关 键 词：Thermoelectric materials n-type CdSb Indium doping Band degeneracy 

分 类 号：TB34[一般工业技术—材料科学与工程]