Pressure-driven anomalous thermal transport behaviors in gallium arsenide  

作　　者：Zhongyin Zhang Xuanhui Fan Jie Zhu Kunpeng Yuan Jing Zhou Dawei Tang 

机构地区：[1]Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education,Dalian University of Technology,Dalian 116023,China

出　　处：《Journal of Materials Science & Technology》2023年第11期89-97,共9页材料科学技术（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.51720105007,51976025,and 52206219);the Fundamental Research Funds for the Central Universities(No.DUT22ZD216).

摘　　要：High-pressure has been widely utilized to improve material performances such as thermal conductiv-ityκand interfacial thermal conductance G.Gallium arsenide(GaAs)as a functional semiconductor has attracted extensive attention in high-pressure studies for its technological importance and complex structure transitions.Thermal properties of GaAs under high pressure are urgent needs in physics but remain elusive.Herein,we systematically investigateκGaAs and G Al/GaAs of multi-structure up to -23 GPa.We conclude that:(1)in pressurization,phonon group velocity,lattice defects,and electrons play a central role inκGaAs in elastic,plastic,and metallization regions,respectively.The increased phonon density of states(PDOS)overlap,group velocity,and interfacial bonding enhances G Al/GaAs.(2)In depressurization,electrons remain the dominant factor on κ GaAs from 23 to 13.5 GPa.G Al/GaAs increases dramatically at -12 GPa due to the larger PDOS overlap.With decompressing to ambient,lattice defects including grain size reduction,arsenic vacancies,and partial amorphization reduce κ GaAs to a glass-like value.Remarkably,the released G Al/GaAs is 2.6 times higher than that of the initial.Thus our findings open a new dimension in synergistically realizing glass-like κ and enhancing G,which can facilitate thermoelectric performance and its potential engineering applications.

关 键 词：Gallium arsenide High pressure Thermal conductivity Interfacial thermal conductance Time domain thermoreflectance 

分 类 号：TG292[金属学及工艺—铸造]