Van der Waals integration inch-scale 2D MoSe_(2) layers on Si for highly-sensitive broadband photodetection and imaging  

作　　者：Yupiao Wu Shuo-En Wu Jinjin Hei Longhui Zeng Pei Lin Zhifeng Shi Qingming Chen Xinjian Li Xuechao Yu Di Wu 

机构地区：[1]School of Physics and Microelectronics,and Key Laboratory of Material Physics,Zhengzhou University,Zhengzhou 450052,China [2]Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,CA 92093,USA [3]School of Microelectronics Science and Technology,Sun Yat-Sen University,Zhuhai 519082,China [4]Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Nano Research》2023年第8期11422-11429,共8页纳米研究（英文版）

基　　金：This work was financially supported by the National Key R&D Program of China(No.2022YFB2803900);the National Natural Science Foundation of China(Nos.U2004165,U22A20138,and 11974016);the Natural Science Foundation of Henan Province,China(No.202300410376);Key Research and Development Program(social development)of Jiangsu Province(No.BE2021667).

摘　　要：As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air stability.Although 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future applications.Here,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization route.Further,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical signal.In addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging capability.The large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.

关 键 词：molybdenum diselenide large-area synthesis broadband photodetector integrated device array van der Waals(vdW)heterojunction 

分 类 号：TN97[电子电信—信号与信息处理]