Enhanced oxidation resistance of Ce by addition of Ga and nanocrystallization  

作　　者：T.S.Liang Y.F.Jiang H.Y.Li W.Wang Q.Zhang B.Zhang 

机构地区：[1]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [2]The 404 Company Limited,China National Nuclear Corporation,Lanzhou 732850,China [3]State Key Laboratory of Material Processing and Die&Mould Technology,School of Material Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Journal of Materials Science & Technology》2023年第16期26-36,共11页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.52101107);the China Postdoctoral Science Foundation(No.2021M703274);CNNC’s 2021 young talents scientific research project(No.75)。

摘　　要：Ce is prone to catastrophic oxidation at room temperature and its oxidation resistance is difficult to be improved by alloying.Herein,we found that the oxidation resistance of active metal Ce can be significantly improved by the addition of 20 at.%Ga.Focused ion beam lift-out technique and scanning transmission electron microscopy analysis disclosed that a discontinuous Ga-rich layer was generated beneath the oxide layer in the coarse-grained Ce-Ga alloy.The Ga-rich layer formed by selective oxidation of Ce acts as a diffusion barrier for Ce outward diffusion and ceases the O/M interfacial reaction when a critical concentration of Ga(75 at.%)is reached.After nanocrystallization,uniform distribution of Ga was achieved.After oxidation,a relatively continuous Ga-rich layer was formed which further enhanced the oxidation resistance.The introduction of noble elements combining with nanocrystallization may provide a novel strategy for the protection of metals with high activity and poor oxidation resistance.

关 键 词：Ce-Ga alloy Oxidation resistance Diffusion barrier NANOCRYSTALLIZATION 

分 类 号：TB306[一般工业技术—材料科学与工程]