Single crystal-single crystal bonding of langasite exhibited high strength of 23.28 MPa  

作　　者：Guangyao Pei Binghe Ma Tao Ye Zhonggang Zhang Keli Zhao Jinjun Deng Seeram Ramakrishna Jian Luo 

机构地区：[1]Ministry of Education Key Laboratory of Micro/Nano Systems for Aerospace,Northwestern Polytechnical University,Xi’an 710072,China [2]Centre for Nanofibers and Nanotechnology,National University of Singapore,117576,Singapore

出　　处：《Journal of Materials Science & Technology》2023年第29期139-147,共9页材料科学技术（英文版）

基　　金：the National Nat-ural Science Foundation of China(No.5207052574);the Fundamental Research Funds for the Central Universities(No.D5000220072).

摘　　要：Langasite(LGS,La_(3)Ga_(5)SiO_(14))is a promising material in high-temperature piezoelectric devices due to its excellent thermal stability,piezoelectricity,and electrical property.A major challenge in the development of LGS-based devices is to form high-strength bonding of the brittle LGS.Here,we report that the single crystal-single crystal(dual-SC)bonding of LGS is realized through thermal activation under a low com-pression of 50 kPa for the first time.A record bonding strength of 23.28 MPa is achieved within the dual-SC bonded LGS/LGS structure(with a high bonding ratio exceeding 93%),which is 5 times higher than that of the recent reported LGS/LGS bonding structure(in which a relatively fragile amorphous interface layer is formed between the two LGS samples).The smooth and void-free dual-SC bonding interface of LGS is verified via the cross-sectional transmission electron microscopy(TEM)observations.

关 键 词：Thermal activation Single crystal-single crystal bonding LANGASITE HIGH-STRENGTH Low compression 

分 类 号：TG132.3[一般工业技术—材料科学与工程] TG156[金属学及工艺—合金]