Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits  

作　　者：Leini Wang Gang He Wenhao Wang Xiaofen Xu Shanshan Jiang Elvira Fortunato Rodrigo Martins 

机构地区：[1]School of Materials Science and Engineering,Anhui University,Hefei 230601,China [2]School of Integration Circuits,Anhui University,Hefei 230601,China [3]Department of Materials Science/CENIMAT-I3N,Faculty of Sciences and Technology,New University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparic1,Portugal

出　　处：《Journal of Materials Science & Technology》2023年第28期41-51,共11页材料科学技术（英文版）

基　　金：the National Natural Science Foundation of China(No.11774001);the Anhui Project(No.Z010118169).

摘　　要：The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)TFTs.The improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction interface.Besides,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).Low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of 13.The effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.

关 键 词：MXene-doped In_(2)O_(3) HOMOJUNCTION 2D electron gases Thin film transistor Low frequency noise 

分 类 号：TN321.5[电子电信—物理电子学]