Dynamic behavior of tunneling triboelectric charges in two-dimensional materials  

作　　者：Xuan Zhao Liangxu Xu Xiaochen Xun Fangfang Gao Qingliang Liao Yue Zhang 

机构地区：[1]Academy for Advanced Interdisciplinary Science and Technology,School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China [2]Beijing Advanced Innovation Center for Materials Genome Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《International Journal of Minerals,Metallurgy and Materials》2023年第9期1801-1808,共8页矿物冶金与材料学报（英文版）

基　　金：supported by the National Key Research and Development Program of China (No.2018YFA0703500);the National Natural Science Foundation of China(Nos.52232006,52188101,52102153,52072029,51991340,and 51991342);the Overseas Expertise Introduction Projects for Discipline Innovation (No.B14003);the China Postdoctoral Science Foundation (No.2021M700379);the Fundamental Research Funds for Central Universities(No.FRF-TP-18-001C1)。

摘　　要：Although the research history of triboelectrification has been more than 2000 years, there are still many problems to be solved so far.The use of scanning probe microscopy provides an important way to quantitatively study the transfer, accumulation, and dissipation of triboelectric charges in the process of triboelectrification. Two-dimensional materials are considered to be key materials for new electronic devices in the post-Moore era due to their atomic-scale size advantages. If the electrostatic field generated by triboelectrification can be used to replace the traditional gate electrostatic field, it is expected to simplify the structure of two-dimensional electronic devices and reconfigure them at any time according to actual needs. Here, we investigate the triboelectrification process of various two-dimensional materials such as MoS_(2), WSe_(2),and ZnO. Different from traditional bulk materials, after two-dimensional materials are rubbed, the triboelectric charges generated may tunnel through the two-dimensional materials to the underlying substrate surface. Because the tunneling triboelectric charge is protected by the twodimensional material, its stable residence time on the substrate surface can reach more than 7 days, which is more than tens of minutes for the traditional triboelectric charge. In addition, the electrostatic field generated by the tunneling triboelectric charge can effectively regulate the carrier transport performance of two-dimensional materials, and the source–drain current of the field effect device regulated by the triboelectric floating gate is increased by nearly 60 times. The triboelectric charge tunneling phenomenon in two-dimensional materials is expected to be applied in the fields of new two-dimensional electronic devices and reconfigurable functional circuits.

关 键 词：two-dimensional materials triboelectric charge dynamic behavior reconfigurable electronics 

分 类 号：TB34[一般工业技术—材料科学与工程]