硅光电倍增管偏置补偿电源电路设计  

Design of the power circuit of bias compensation for the silicon photomultiplier

作　　者：李飞 庞晓东[1] 徐陈勇 LI Fei;PANG Xiaodong;XU Chenyong(Beijing Zhongdun Anmin Analysis Technology Company Limited,First Research Institute of The Ministry of Public Security of People’s Republic of China,Beijing 102200,China)

机构地区：[1]公安部第一研究所北京中盾安民分析技术有限公司,北京102200

出　　处：《电子设计工程》2023年第16期102-106,111,共6页Electronic Design Engineering

摘　　要：硅光电倍增管(SiPM)器件具有极强的温度依赖性,其温度变化最终会引起增益漂移,所以为了在温度波动的情况下保持增益相对稳定,该文研发设计了一款光电倍增管的偏置补偿电源电路。该设计通过NTC热敏电阻、STM32L1系列微控制器和精密运放等实现可自动调整电源电路,微控制器通过计算出检测值与真实电压的关系,利用ADC检测值进行反馈调节的方式,最终实现SiPM偏置电压的精确调节。测试结果表明,该系统能补偿温度变化引起的输出电压漂移,该系统提高了探测器偏置电压的稳定性,从线性拟合结果来看,实际和理论偏置电压的线性相关系数为0.999 16,稳压器输出电压纹波电压小于1%。The Silicon Photomultiplier(SiPM)has a strongly temperature dependence that its change will eventually cause gain drift output voltage.In order to keep the gain relatively stable in case of temperature fluctuation,we design a power circuit of bias compensation for the SiPM.The design realizes the power circuit that can be automatically adjusted through NTC thermistor,STM32L1 series micro controller and precision operational amplifier.The micro controller calibrated the relationship between the ADC monitoring value and the real bias voltage.The ADC monitoring value is used for feedback regulation to realize the precise bias adjustment.The test results show that the system can compensate the output voltage drift and improves the stability of the detector bias voltage.According to the linear fitting results,the linear correlation coefficient between the actual and theoretical bias voltage is 0.99916,output voltage ripple voltage of voltage regulator is less than 1%.

关 键 词：硅光电倍增管 STM32L1 温度补偿 NTC热敏电阻 

分 类 号：TN9[电子电信—信息与通信工程]