Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing  

作　　者：Zheng Fan JiSheng Liang Jun-Liang Chen Ying Peng Huajun Lai Jian Nong Chengyan Liu Wangyang Ding Lei Miao 

机构地区：[1]Guangxi Key Laboratory for Relativity Astrophysics,State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures,School of Physical Science and Technology,Guangxi University,Nanning,530004,China [2]Engineering Research Center of Electronic Information Materials and Devices,Ministry of Education,Guangxi Key Laboratory of Information Material,Guilin University of Electronic Technology,Guilin,541004,China [3]Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin,541004,China [4]Guangxi Academy of Sciences,Nanning,530007,China

出　　处：《Journal of Materiomics》2023年第5期984-991,共8页无机材料学学报（英文）

基　　金：supported by National Key Research and Development Program of China(No.2017YFE0198000,2022YFE0119100).National Natural Science Foundation of China(Grant No.U21A2054,52273285,52061009,52262032).Guangxi Science and Technology Project(Grant No.AD21220056).

摘　　要：SiGe is recognised as an excellent thermoelectric material with superior mechanical properties and thermal stability in regions with high temperatures.This study explores a novel strategy for coregulating thermoelectric transport parameters to achieve high thermoelectric properties of p-type SiGe in the mid-temperature region by incorporating nano-TaC into SiGe combined ball milling with spark plasma sintering.By optimizing the amount of TaC in the SiGe matrix,the power factors were significantly increased due to the modulation doping effect based on the work function matching of SiGe with TaC.Simultaneously,the ensemble effect of the nanostructure leads to a significant decrease in thermal conductivity.Thus,a high ZT of 1.06 was accomplished at 873 K,which is 64%higher than that of typical radioisotope thermoelectric generator.Our research offers a novel strategy for expanding and enhancing the thermoelectric properties of SiGe materials in the medium temperature range.

关 键 词：SIGE THERMOELECTRIC Work function matching Modulation doping effect Phonon scattering 

分 类 号：TB34[一般工业技术—材料科学与工程]