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作 者:谢冰川 张瑞 王欢欢 王勇 耿志辉 廖云峰 杨修东 XIE Bing-Chuan;ZHANG Rui;WANG Huan-Huan;WANG Yong;GENG Zhi-Hui;LIAO Yun-Feng;YANG Xiu-Dong(Key Laboratory of Science and Technology on High Power Microwave Sources and Technologies,Aerospace Information Research Institute,Chinese Academy of Sciences,Beijing 100190,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials Science and Optoelectronics Engineering,School of Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]中国科学院空天信息创新研究院高功率微波源与技术重点实验室,北京100190 [2]中国科学院大学电子电气与通信工程学院,北京100049 [3]中国科学院大学材料科学与光电技术学院,北京100049
出 处:《红外与毫米波学报》2023年第4期504-509,共6页Journal of Infrared and Millimeter Waves
基 金:Supported by the National Magnetic Confinement Fusion(MCF)Energy Research and Development Program(2018YFE0305100);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(YJKYYQ20180005)。
摘 要:提出了一种工作在TM_(310)模式下的用于高次模式速调管的新型谐振腔。通过对侧腔电场的离散化,可以有效地增强中间腔和侧腔的电场。当两腔均工作在TM_(310)模式时,新型谐振腔的特性阻抗均高于传统的哑铃型腔。对两种腔体进行了尺寸敏感性分析。在此基础上,设计了一个W频段的射频电路。当向射频电路注入45 mW的输入功率时,获得了52.4 dB的高增益和7.8 kW的峰值输出功率。互作用电路由25 kV、2 A的圆形电子注驱动。该互作用电路的电子效率和3-dB带宽分别为15.6%和120 MHz。A novel resonator has been proposed for the klystron that operates at TM_(310) mode.The electric fields of both the middle cavity and the side cavity are effectively enhanced by discretizing the field in the side cavity.The novel resonator demonstrates a higher characteristic impedance than the traditional barbell shape cavity when both cavities operate at TM_(310) mode.Sensitivity analysis has been performed on these two kinds of cavities.Moreover,an RF circuit in the W-band has been designed based on the proposed novel cavity.The RF circuit can achieve a high gain of 52.4 dB and a peak output power of 7.8 kW when 45 mW input power is injected.The circuit is driv⁃en by a 25 kV and 2 A pencil beam.The electronic efficiency and 3-dB bandwidth are 15.6%and 120 MHz,re⁃spectively.
关 键 词:扩展互作用速调管 高次模腔 场离散化 哑铃型腔 敏感性分析
分 类 号:TN122[电子电信—物理电子学]
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