基于SRAM的感存算一体化技术综述  

Review of the Fused Technology of Sensing,Storage and Computing Based on SRAM

作　　者：杨兴华 杨子翼 苏海津 姜炜煌 张静[2] 魏琦[4] 骆丽[3] 王忠静[4] 吕华芳[4] 乔飞[4] YANG Xinghua;YANG Ziyi;SU Haijin;JIANG Weihuang;ZHANG Jing;WEI Qi;LUO Li;WANG Zhongjing;LÜHuafang;QIAO Fei(College of Science,Beijing Forestry University,Beijing 100091,China;School of Information,North China University of Technology,Beijing 100041,China;School of Electronic and Information Engineering,Beijing Jiaotong University,Beijing 100044,China;Tsinghua University,Beijing 100084,China)

机构地区：[1]北京林业大学理学院,北京100091 [2]北方工业大学信息学院,北京100041 [3]北京交通大学电子信息工程学院,北京100044 [4]清华大学,北京100084

出　　处：《电子与信息学报》2023年第8期2828-2838,共11页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(92164203);清华大学-宁夏银川水联网数字治水联合研究院基金项目(SKL-IOW-2020TC2003)。

摘　　要：基于SRAM(静态随机存取)存储器的感存算一体化芯片架构将传感、存储和计算功能结合,通过使存储单元具备计算能力,避免了计算过程中数据的搬移,解决了冯诺依曼架构所面临的“存储墙”的问题。该结构与传感器部分结合,可以实现超高速、超低功耗的运算能力。SRAM存储器相较于其他存储器在速度方面具有较大优势,主要体现在该架构能够实现较高的能效比,在精度增强后可以保证较高精度,适用于低功耗高性能要求下的大算力场景设计。该文调研了近几年来关于感存算一体化的研究,介绍了传统感知系统和持续感知系统及感算共融系统,并介绍了基于SRAM存储器的感存算一体芯片最常见的几种计算单元结构,在电压域、电荷域和数字域考察了基于SRAM的感存算一体的研究发展,进行分析对比其优劣势,结合调研分析讨论了该领域的未来发展方向。The integrated chip architecture based on SRAM memory combines sensing,storage and computing functions,solving the problem of“storage wall”faced by the Von Neumann architecture by enabling the memory unit to have computing power and avoiding the transfer of data during the calculation process.This structure is combined with the sensor part to achieve ultra-high-speed,ultra-low-power computing power.SRAM memory has great advantages in terms of speed compared to other memory,mainly reflected in the fact that the architecture can achieve a high energy efficiency ratio,which can ensure high accuracy after the accuracy is enhanced,and is suitable for large computing power scenario design under the requirements of low power consumption and high performance.This paper introduces the structure of the sensor-memory-computing chip based on SRAM memory,investigates the research and development of SRAM-based sensor-memory-computing integration in the voltage domain,charge domain and digital domain,and discusses the future development direction of this field.

关 键 词：感存算一体 SRAM存储器 冯诺依曼计算架构 

分 类 号：TN403[电子电信—微电子学与固体电子学]