倍半氧化物晶体及其1~3μm波段激光性能研究进展  

Research Progress of Sesquioxide Crystals and Its Laser Performances in the Band of 1~3μm

作　　者：王萌萌 尹延如 丁晓圆 张晶 付秀伟[1] 贾志泰[1,3] 陶绪堂 WANG Mengmeng;YIN Yanru;DING Xiaoyuan;ZHANG Jing;FU Xiuwei;JIA Zhitai;TAO Xutang(State Key Laboratory of Crystal Material,Shandong University,Jinan 250100,China;GK Optoelectronics Co.,Ltd.,Beijing 100094,China;Shandong Research Institute of Industrial Technology,Jinan 250100,China)

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]国科光电科技有限责任公司,北京100094 [3]山东省工业技术研究院,济南250100

出　　处：《人工晶体学报》2023年第7期1169-1194,共26页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2022YFB3605704);国家自然科学基金(62105181)。

摘　　要：倍半氧化物具有优异的热学性能、稳定的物化性能、低的最大声子能量和强的晶体场,是理想的高功率、大能量激光基质材料。倍半氧化物具有超高熔点,因此其高质量、大尺寸的晶体制备极其困难,研究人员对此进行了长期的研究探索。近年激光技术发展对高品质倍半氧化物单晶的迫切需求促使相关晶体的生长技术取得了突破。本文在简单介绍倍半氧化物性能与结构的基础上,详细综述了Lu_(2)O_(3)、Sc_(2)O_(3)、Y_(2)O_(3)倍半氧化物晶体的生长方法及缺陷种类,系统总结了稀土离子掺杂的倍半氧化物在1~3μm波段内的激光性能,最后对其未来的研究与发展方向进行了展望。Sesquioxides are ideal host materials for mid-infrared laser with high power and energy for their excellent thermal properties,stable physical and chemical properties,low maximum phonon energy and strong crystal field.It is very difficult to prepare large crystals with high quality due to the extremely high melting point of sesquioxides.Researchers have conducted long-term research and exploration on the crystal growth of the sesquioxides.The fast development of laser technology in recent years,which put forward urgent requires for high-quality sesquioxide single crystals,has prompted a breakthrough in crystal growth technology.In this paper,based on the brief introduction of the properties and structures of sesquioxides,the research progress on crystal growth methods and defects of sesquioxides Lu_(2)O_(3),Sc_(2)O_(3)and Y_(2)O_(3)are reviewed in detail.Further,the laser performances of rare earth ion-doped sesquioxides in the mid-infrared band from 1μm to 3μm are systematically summarized.Finally,the development of the sesquioxide single crystals in the future is also prospected.

关 键 词：倍半氧化物 激光基质材料 晶体生长 晶体缺陷 激光性能 Lu_(2)O_(3) Sc_(2)O_(3) Y_(2)O_(3) 

分 类 号：TB34[一般工业技术—材料科学与工程] O78[理学—晶体学]