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作 者:刘畅[1] 刘溪[1] LIU Chang;LIU Xi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)
机构地区:[1]沈阳工业大学信息科学与工程学院,沈阳110870
出 处:《微处理机》2023年第4期19-21,共3页Microprocessors
摘 要:针对传统CMOS反相器在某些领域中的局限性,提出一种基于高集成中央双向肖特基结型单管的反相器。新器件采用深浅组合肖特基势垒隧道晶体管制造方法,具有中央双向肖特基结结构,该结构可有效隔离源漏两侧半导体内载流子的互通,从而避免隧道电流导致的泄漏电流的产生,并且只需要一个晶体管即可实现反相器的基本功能。通过使用Silvaco TCAD对器件进行仿真,分析其工作情况并优化设计参数。仿真结果表明该设计能够实现反向器功能,且与传统CMOS反相器相比,具有更高的集成度和更低的功耗。Aiming at the limitations of traditional CMOS inverters in some fields,a novel inverter based on highly integrated central bidirectional Schottky junction single transistor is proposed.The new device adopts the manufacturing method of deep-shallow Schottky barrier tunnel transistor,and has a central bidirectional Schottky junction structure,which can effectively isolate the communication of carriers in the semiconductor on both sides of the source and drain,thus avoiding the generation of leakage current caused by tunnel current,and only one transistor is needed to realize the basic functions of the inverter.By using Silvaco TCAD to simulate the device,the working condition is analyzed and the design parameters are optimized.The simulation results show that the design can realize the function of inverter,and has higher integration and lower power consumption than the traditional CMOS inverter.
关 键 词:反相器 肖特基势垒 Silvaco TCAD仿真
分 类 号:TN386[电子电信—物理电子学]
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