组分阶梯InGaN势垒对绿光激光二极管光电性能的影响  

Effect of Composition Step-Graded InGaN Barriers on Photoelectric Performance of Green Laser Diode

作　　者：侯俨育 董海亮[1,2] 贾志刚 贾伟 梁建[3] 许并社 HOU Yanyu;DONG Hailiang;JIA Zhigang;JIA Wei;LIANG Jian;XU Bingshe(Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030000,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi′an 710021,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]山西浙大新材料与化工研究院,太原030000 [3]太原理工大学材料科学与工程学院,太原030024 [4]陕西科技大学材料原子·分子科学研究所,西安710021

出　　处：《人工晶体学报》2023年第8期1386-1393,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61904120,21972103);山西浙大新材料与化工研究院(2022SX-TD018,2021SX-AT001、002、003)。

摘　　要：为探究不同铟(In)组分In_(x)Ga_(1-x)N势垒对绿光激光二极管光电性能的影响,本文采用SiLENSe(simulator of light emitters based on nitride semiconductors)仿真软件对一系列具有不同In组分In_(x)Ga_(1-x)N势垒的激光二极管进行研究,结果发现In_(x)Ga_(1-x)N势垒中In组分最佳值为3%,此时结构的斜率效率最高,内部光学损耗最低,光学限制因子最大,性能最优。在具有In_(0.03)Ga_(0.97_N势垒的多量子阱结构基础上,设计了一种组分阶梯(composition step-graded,CSG)InGaN势垒多量子阱结构,提高了激光二极管的斜率效率和电光转换效率,增加了光场限制能力。仿真结果表明,当注入电流为120 mA时,具有CSG InGaN势垒的多量子阱结构,电光转换效率从17.7%提高至19.9%,斜率效率从1.09 mW/mA增加到1.14 mW/mA,光学限制因子从1.58%增加到1.62%。本文的研究为制备高功率GaN基绿光激光二极管提供了理论指导和数据支撑。In order to investigate the influence of In_(x)Ga_(1-x)N barrier with different indium(In)composition on photoelectric performance of green laser diode,a series of green laser diode with In_(x)Ga_(1-x)N barrier of different In composition were simulated by SiLENSe(simulator of light emitters based on nitride semiconductors)software.The results show that the In_(x)Ga_(1-x)N barrier structure with 3%In composition has the highest slope efficiency and the lowest internal optical loss,and also show the largest optical confinement factor and the optimum performance.Based on the multiple quantum well structure with In_(0.03)Ga_(0.97)N barrier,the composition step-graded(CSG)InGaN barrier model structure was designed,which effectively improves the slope efficiency and electro-optical conversion efficiency.Moreover,the optical field confinement increase.The simulation results show that at the injection current of 120 mA,the efficiency of electro-optical conversion increases from 17.7%to 19.9%for the multiple quantum well structure with CSG InGaN barrier,the slope efficiency increases from 1.09 mW/mA to 1.14 mW/mA,and the optical confinement factor increases from 1.58%to 1.62%.The study provides theoretical guidance and data support for the preparation of high-power GaN-based green laser diode.

关 键 词：绿光激光二极管 光电性能 In组分 组分阶梯InGaN势垒 斜率效率 电光转换效率 

分 类 号：TN31[电子电信—物理电子学] O469[理学—凝聚态物理]