锂和镧掺杂取代对SrBi_(2)Nb_(2)O_(9)铁电陶瓷结构及电学性能影响  

Structure and Electrical Properties of Lithium and Lanthanum Modified SrBi_(2)Nb_(2)O_(9)Ferroelectric Ceramics

作　　者：寻宝琛 佐晓帅 徐力 郭菲菲 方频阳[1] XUN Baochen;ZUO Xiaoshuai;XU Li;GUO Feifei;FANG Pinyang(Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices,School of Materials Science and Chemical Engineering,Xi’an Technological University,Xi’an 710021,China)

机构地区：[1]西安工业大学陕西省光电功能材料与器件重点实验室/材料与化工学院,西安710021

出　　处：《西安工业大学学报》2023年第4期323-330,共8页Journal of Xi’an Technological University

基　　金：国家自然科学基金项目(51472197,51602242);陕西省基础研究基金项目(18JS049);西安工业大学基础研究基金项目(XAGDXJJ17009)。

摘　　要：为探究掺杂离子尺寸失配诱导材料晶格畸变,实现对铋层状基铁电陶瓷电学性能的精准调控,文中以传统固相法制备Sr_(1-x)(LiLa)x/2 Bi_(2)Nb_(2)O_(9)(SBN-x LiLa,x=0,0.1,0.3,0.5)陶瓷。采用X射线衍射分析仪、扫描电子显微镜对结构及形貌表征;SBN-x LiLa为正交单相结构且晶粒均为典型片状结构。采用Agilent 4294A阻抗分析仪、准静态测试仪和铁电分析仪等进行电学性能测试;当x=0.3时综合性能达到最佳:Pr=9.04μC·cm^(-2),d^(33)=29pC/N,且居里温度可达471℃;掺杂离子含量引起晶格畸变,导致晶胞参数改变,是SBN-x LiLa陶瓷电学性能提高的重要原因。The paper discusses the effect of the valence and size mismatching of doped ions on the crystal lattice distortion in order to realize precision regulation of the electrical properties of bismuth layered ferroelectric ceramics.The conventional solid state reaction method was used to prepare Sr_(1-x)(LiLa)x/2 Bi_(2)Nb_(2)O_(9)(SBN-x LiLa,x=0.0,0.1,0.3,0.5)ferroelectric ceramics,whose phase structure and morphology were then characterized with an X ray diffraction analyzer and a scanning electron microscope.SBN-x LiLa ceramics had an orthogonal single phase structure and typical plate like structure.Their electrical properties were tested with an Agilent 4294A precision impedance analyzer,a quasi static d_(33)tester and a ferroelectric analyzer.For x=0.3,their overall performance was the best(Pr=9.04μC·cm^(-2)and d_(33)=29pC/N),and Curie temperature(T_(c))was 471℃.It is concluded that lattice distortion caused by the content of doped ions can change the lattice parameters,which is an important reason for the improvement of electrical properties of SBN xLiLa ceramics.

关 键 词：铋层状铁电陶瓷 SrBi_(2)Nb_(2)O_(9) 晶格畸变 电学性能 

分 类 号：TM282[一般工业技术—材料科学与工程]