碳化硅MOSFET桥臂串扰机理分析与抑制策略  

Mechanism Analysis and Suppression Strategy for Bridge-arm Crosstalk of Silicon Carbide MOSFET

作　　者：何杰 刘钰山 毕大强[2] 李晓 HE Jie;LIU Yushan;BI Daqiang;LI Xiao(School of Automation Science and Electrical Engineering,Beihang University,Haidian District,Beijing 100083,China;State Key Laboratory of Control and Simulation of Power Systems and Generation Equipment(Department of Electrical Engineering,Tsinghua University),Haidian District,Beijing 100084,China)

机构地区：[1]北京航空航天大学自动化科学与电气工程学院,北京市海淀区100083 [2]电力系统及发电设备安全控制和仿真国家重点实验室(清华大学电机工程与应用电子技术系),北京市海淀区100084

出　　处：《中国电机工程学报》2023年第15期6005-6019,共15页Proceedings of the CSEE

基　　金：北京市科技新星计划项目(Z211100002121080);国家自然科学基金项目(52107175);清华大学电力系统及大型发电设备安全控制和仿真国家重点实验室开放课题(SKLD20M05)。

摘　　要：桥臂串扰指关断态开关管驱动端状态受到同一桥臂支路另一开关管开通或关断的干扰而产生扰动。相比于传统硅器件,碳化硅金属–氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)开关速度更高、驱动端可靠关断区间更小,因此,其桥臂串扰问题更加突出。为提高碳化硅MOSFET可靠性,有必要分析碳化硅MOSFET桥臂串扰发生过程和特点,并提出相应解决方案。为此,文中首先建立基于碳化硅MOSFET桥臂串扰电路模型,并分析该模型暂态过程;其次,基于分析结果建立桥臂串扰电压极值简化模型,并提出基于桥臂串扰问题安全工作区模型,然后,由此提出并设计具有桥臂串扰抑制功能的栅极驱动电路;最后,通过实验验证所提桥臂串扰模型的可行性,以及所提栅极驱动电路的有效性。Bridge-arm crosstalk(BAC)refers to the phenomena that the driving state of the switching device kept in the off state is disturbed by the turn-on or turn-off of another switching device in the same bridge-arm branch.Compared with traditional silicon devices,silicon carbide(SiC)metal-oxide-semiconductor field effect transistors(MOSFETs)have higher switching speed and smaller turn-off range,so the BAC of SiC MOSFETs is more serious.To improve the reliability of SiC MOSFETs,it is necessary to analyze the occurrence process and characteristics of the BAC of SiC MOSFETs,and propose corresponding solutions.To this end,a BAC circuit model of SiC MOSFETs is established,and the transient process of the circuit model is analyzed.Based on the analysis results,simplified models of the extreme values of the crosstalk voltage are established,and a safe operation area model based on the BAC of SiC MOSFETs is proposed.Then,a gate driver with bridge-arm crosstalk suppression function is proposed and designed.Finally,the experiments validate the feasibility of the BAC model and the effectiveness of the gate driver.

关 键 词：碳化硅MOSFET 暂态分析 桥臂串扰 栅极驱动器 安全工作区 开尔文源极 

分 类 号：TM401[电气工程—电器]