Si_(3)N_(4)/W高温共烧陶瓷的制备与研究  

Preparation and Study of Si_(3)N_(4)/W High Temperature Co-fired Ceramics

作　　者：戴金荣 唐志红[1] 段于森 张景贤[2] DAI Jinrong;TANG Zhihong;DUAN Yusen;ZHANG Jingxian(School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093 [2]中国科学院上海硅酸盐研究所,上海200050

出　　处：《材料导报》2023年第17期113-118,共6页Materials Reports

基　　金：国家自然科学基金(52102082);上海扬帆计划(21YF1454500)。

摘　　要：氮化硅陶瓷具有良好的热导率与优异的力学性能,在大功率电子器件中具有较好的应用前景。实现氮化硅陶瓷与金属的高温共烧对其在电子器件中的应用具有重要意义。高温共烧技术常用氧化铝陶瓷、氧化锆陶瓷和氮化铝陶瓷作为基板材料,鉴于此,本工作以氮化硅陶瓷为基板材料,结合流延成型、丝网印刷以及高温共烧技术制备氮化硅多层共烧组件,探究烧结助剂(Er_(2)O_(3))含量对氮化硅陶瓷性能的影响,并对氮化硅多层组件脱粘工艺、界面结构与成分和导电性能进行分析与讨论。结果表明:Er_(2)O_(3)含量为9%(质量分数,下同)时,可得到相对密度、收缩率、热导率和抗弯强度分别为95.35%、10.33%、69.94 W/(m·K)和(807.33±10.34)MPa的氮化硅陶瓷。适用于氮化硅多层组件的脱粘工艺为:在真空下以1℃/min的速率升温到600℃并保温1 h。共烧后氮化硅多层组件中的W层厚度约为7μm,W层与陶瓷层界面明显,既存在机械互锁型结构,也有界面反应发生,产物为W5Si3。组件的薄层方阻为0.878Ω/sq,证明组件具有导电性能。本工作为高温共烧技术提供了一种新型的基板材料,也为氮化硅陶瓷与金属高温共烧做出了新的探索,有利于扩展氮化硅陶瓷在电子行业的应用。Silicon nitride(Si_(3)N_(4))ceramics,with good thermal conductivity and excellent mechanical properties,have great development prospect in high-power electronic devices.The realization of high temperature co-firing of Si_(3)N_(4)ceramics and metal is of great significance for the application of Si_(3)N_(4)ceramics in electronic devices.The substrate materials commonly used in high temperature co-firing technology are alumina,zirconia and aluminum nitride ceramics.In view of this,this work used Si_(3)N_(4)ceramics as substrate materials,combining tape casting,screen prin-ting and high temperature co-firing technology to prepare Si_(3)N_(4)multilayer co-firing components,and explored the influence of the sintering additive(Er_(2)O_(3))content on the properties of Si_(3)N_(4)ceramics.The debonding process,interface structure and composition,and conductivity of Si_(3)N_(4)multilayer components were analyzed and discussed.The results showed that at the Er_(2)O_(3)content of 9%,and the relative density,shrinkage,thermal conductivity and bending strength of Si_(3)N_(4)ceramics were 95.35%,10.33%,69.94 W/(m·K)and(807.33±10.34)MPa,respectively.The debonding process for Si_(3)N_(4)multilayer components was determined:increasing the temperature up to 600℃with 1 h holding in vacuum at the heating rate of 1℃/min.The thickness of the W layer in the obtained Si_(3)N_(4)multilayer component was about 7μm,and the boundary between the W layer and the Si_(3)N_(4)ceramic layer was obvious.There was a mechanical interlocking structure developed with the presence of W 5Si 3 at the interface due to the reaction between Si_(3)N_(4)and W.The sheet resistance of the module was 0.878Ω/sq,which proved that the component showed electrical conductivity.This work provided a new substrate material for high temperature co-firing technology,and also developed the technology of the high temperature co-firing of Si_(3)N_(4)ceramics with metal,helping to expand the application of Si_(3)N_(4)ceramics in electronics industry.

关 键 词：高温共烧技术 氮化硅陶瓷 丝网印刷 钨 

分 类 号：TQ174[化学工程—陶瓷工业]