铜蚀刻液蚀刻工艺的研究  

Study on the Etching Process of Copper Etching Solution

作　　者：章学春 聂航 李玉兴 ZHANG Xuechun;NIE Hang;LI Yuxing

机构地区：[1]上海盛剑微电子有限公司,上海200000

出　　处：《上海化工》2023年第4期33-36,共4页Shanghai Chemical Industry

摘　　要：研究了以过氧化氢为主成分的铜蚀刻液。采用小试蚀刻机模拟产线测试条件,考察铜离子质量浓度、铜络合剂的种类与质量分数、过氧化氢质量分数、蚀刻温度以及蚀刻压力对铜蚀刻速率的影响。得到的最佳蚀刻条件为:铜离子质量浓度为3 g/L,铜络合剂选用亚氨基二乙酸且质量分数为1.5%,过氧化氢质量分数为20%,温度为30~45℃,压力为0.2 MPa。The copper etching solution with hydrogen peroxide as the main component was studied.The effects of copper ion mass concentration,type and mass fraction of copper complexing agent,mass fraction of hydrogen peroxide,etching temperature and etching pressure on the copper etching rate were investigated by using a small test etching machine to simulate the production line test conditions.The optimal etching conditions were as follows:the mass concentration of copper ion was 3 g/L,the complexing agent was iminodiacetic acid with a mass fraction of 1.5%,the mass fraction of hydrogen peroxide was 20%,the temperature was 30-45℃,and the pressure was 0.2 MPa.

关 键 词：过氧化氢 铜 蚀刻液 

分 类 号：TN405[电子电信—微电子学与固体电子学]