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作 者:周郁明 穆世路 杨华 王兵 陈兆权 ZHOU Yu-ming;MU Shi-lu;YANG Hua;WANG Bing;CHEN Zhao-quan(School of Electrical and Information Engineering,Anhui University of Technology,Ma’anshan,Anhui 243002,China)
机构地区:[1]安徽工业大学电气与信息工程学院,安徽马鞍山243002
出 处:《电子学报》2023年第6期1468-1473,共6页Acta Electronica Sinica
基 金:安徽省自然科学基金(No.2008085ME157);安徽高校自然科学研究项目(No.KJ2020A0247)。
摘 要:由大电流硅绝缘栅双极型晶体管(Silicon Insulated-Gate Bipolar Transistor,Si IGBT)和小电流碳化硅金属-氧化物-半导体场效应晶体管(Silicon Carbon Metal-Oxide-Semiconductor Field-Effect Transistor,SiC MOSFET)并联构成的Si/SiC混合开关具有低成本、高效率的特点. Si/SiC混合开关门极关断延时的控制是提高混合开关效率的关键因素.本文首先研究了在不同工作电流下Si/SiC混合开关关断损耗随门极关断延时的变化,结果表明,Si/SiC混合开关有一个最优的关断延时,此时混合开关的关断损耗最低,并且最优门极关断延时随混合开关工作电流的增大而减小.将所得到的Si/SiC混合开关最优门极关断延时应用在单相全桥逆变器中,实验结果表明,逆变器的转换效率比同等条件下固定关断延时的最高转换效率提高了0.67%.Si/SiC hybrid switch configured by a high-current silicon insulated-gate bipolar transistor(Si IGBT)and a low-current silicon carbon metal-oxide-semiconductor field-effect transistor(SiC MOSFET)in parallel has the advantages of low cost and high efficiency.The delay time of gate turn-off is the key to improve the efficiency of Si/SiC hybrid switch.In this paper,the relationship between the turn-off power loss and the delay time of gate turn-off for Si/SiC hybrid switch with different working current has been investigated,and the result has shown that there is an optimal delay time of gate turnoff for Si/SiC hybrid switch,with this optimal delay time,Si/SiC hybrid switch can achieve minimum turn-off loss,more⁃over,the optimal delay time will decrease with the increasing of Si/SiC hybrid switch working current.The optimal delay time of gate turn-off for Si/SiC hybrid switch has been applied to sing-phase full bridge inverter,and the experimental result has indicated that the conversion efficiency of inverter with the optimal delay time of gate turn-off is improved by 0.67%compared with the highest conversion efficiency of inverter with fixed delay time of gate turn-off for Si/SiC hybrid switch.
关 键 词:Si/SiC混合开关 关断延时 逆变器 转换效率
分 类 号:TN386[电子电信—物理电子学] TM464[电气工程—电器]
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