界面种子层修饰策略制备高性能CsPbIBr_(2)光电探测器  

Preparation of High-Performance CsPbIBr_(2) Photodetector via Interfacial Seed Layer Modification Strategy

作　　者：舒鑫 鹿颖申 张子发 康家兴 袁翔 洪峰[1,2] 徐闰[2,3] 马忠权[1] 徐飞[1,2] Shu Xin;Lu Yingshen;Zhang Zifa;Kang Jiaxing;Yuan Xiang;Hong Feng;Xu Run;Ma Zhongquan;Xu Fei(Shanghai Key Laboratory of High Temperature Superconductors,Department of Physics,Shanghai University,Shanghai 200444,China;Zhejiang Institute of Advanced Materials,Shanghai University,Jiashan 314113,Zhejiang,China;Department of Electronic Information Materials,Shanghai University,Shanghai 200444,China)

机构地区：[1]上海大学物理系,上海市高温超导重点实验室,上海200444 [2]上海大学(浙江)高端装备基础件材料研究院,浙江嘉善314113 [3]上海大学电子信息材料系,上海200444

出　　处：《光学学报》2023年第14期32-39,共8页Acta Optica Sinica

基　　金：国家自然科学基金(12175131,61874070,61874027,11527805,11905133)。

摘　　要：在相对湿度低于90%(<90%RH)的大气环境下,通过界面种子层修饰策略,利用气动喷涂法制备出高结晶度、界面接触良好、结构稳定的CsPbIBr_(2)厚膜。界面种子层的引入对CsPbIBr_(2)厚膜的光学带隙(2.10~2.12 eV)没有太大的影响,但明显增强了其对光的吸收和发射,并且荧光寿命也明显延长(从0.95 ns到4.49 ns)。由此厚膜制备的二极管型光电探测器(p-n CsPbIBr_(2)-ITO)具有非常低的暗电流(5.70×10^(-10)A),并且展示出高效的光电探测性能:高开关比(1.8×10^(4))以及微秒级别的响应时间(上升时间和下降时间分别为9μs、13μs)。当未封装的CsPbIBr_(2)光电探测器处在<90%RH的大气环境下,其表现出强的抗水抗氧能力:储存60 d后,其仍能保持初始开关比的83%。所提方法为在大气环境下制备低成本、高性能、长效稳定的二极管型CsPbIBr_(2)光电探测器提供了一种有效的途径。Objective Photodetectors can convert incident light into electric signals and are widely used in many fields such as image sensing,optical communication,environmental monitoring,and biological detection.In recent years,allinorganic metal halide perovskite CsPbIBr_(2) has been concerned in photoelectric detection due to its high light absorption coefficient,high charge carrier mobility,and low defect density.On the one hand,CsPbIBr_(2) film is susceptible to ambient humidity,so it is not usually prepared under an atmospheric environment but in glove boxes by methods such as spin coating.On the other hand,on account of uncontrolled nucleation during crystallization,CsPbIBr_(2) film has poor morphology and crystallinity,which results in weak photoelectric characteristics and instability of its photodetector.In order to overcome these problems,the morphology,crystallinity,and water/oxygen resistance of CsPbIBr_(2) thick film can be improved by additives and interface layer strategies.In this study,we employ an interfacial seed layer modification strategy under an atmospheric environment with relative humidity(RH)below 90%to prepare one highquality CsPbIBr_(2) thick film with high crystallinity,excellent interfacial contact,and stable structure.We hope that our findings can help fabricate lowcost,highperformance,and longlasting photodiodetype CsPbIBr_(2) photodetectors under an atmospheric environment.Methods CsPbIBr_(2) thick films with controllable thicknesses in the range of 0.5-100μm are prepared under an atmospheric environment with RH below 90%by pneumatic spraying.Prior to spraying,the interfacial seed layers are formed on the substrates by spincoating followed by annealing.During spincoating,the density distribution of the interfacial seed layers is realized by controlling the concentration of precursor solution.In this strategy,the interfacial seed layers act as the nucleating points for crystal growth,which improve the crystallization of the thick films in preparation processing.The morphology and the phase

关 键 词：探测器 二极管型光电探测器 界面种子层 大气环境 气动喷涂 

分 类 号：TN364[电子电信—物理电子学]