Bi_(3.79)Er_(0.03)Yb_(0.18)Ti_(2.97)W_(0.03)O_(12):xSi上转换荧光体的结构和性能  

Structure and Properties of Nano-Silicon Doped Bi_(3.79)Er_(0.03)Yb_(0.18)Ti_(2.97)W_(0.03)O_(12)∶xSi Upconversion Phosphor

作　　者：周金磊 雷西虎 邹本善 沈应墙 高锋 Zhou Jinlei;Lei Xihu;Zou Benshan;Shen Yingqiang;Gao Feng(Guangxi Key Laboratory of Nonferrous Metals and Characteristic Materials Processing,School of Resources,Environment and Materials,Guangxi University,Nanning 530004,Guangxi,China)

机构地区：[1]广西大学资源环境与材料学院,广西有色金属及特色材料加工重点实验室,广西南宁530004

出　　处：《激光与光电子学进展》2023年第13期230-236,共7页Laser & Optoelectronics Progress

摘　　要：通过高温固相烧结法制备出一系列Si掺杂的Bi_(3.79)Er_(0.03)Yb_(0.18)Ti_(2.97)W_(0.03)O_(12):xSi荧光体,探索其结构和上转换荧光性能。实验与测试结果表明,在不同气氛下制备的Bi_(3.79)Er_(0.03)Yb_(0.18)Ti_(2.97)W_(0.03)O_(12)∶xSi荧光体均为单一层状类钙钛矿结构的Bi_(4)Ti_(3)O_(12)相。Si在荧光体中以Si^(4+)为主,说明即使在氩气氛围中,掺入的大部分Si也发生了氧化。Si掺杂增加了材料的致密性和表面平整度,同时减小了材料的光学带隙并增强了光吸收。在980 nm红外光激发下,所有样品的上转换发射光谱均显示以525 nm、545 nm和765 nm为中心的三个发射带,分别对应Er^(3+)4f电子层内的电子跃迁。掺硅6%摩尔分数的样品的发光强度和荧光寿命约为未掺杂Si的样品2倍,表明Si掺杂可以明显提升稀土掺杂钛酸铋基荧光体的光致发光性能。A series of Si-doped Bi_(3.79)Er_(0.03)Yb_(0.18)Ti_(2.97)W_(0.03)O_(12)∶xSi phosphors were prepared by high temperature solidstate sintering,and their structures and upconversion fluorescence properties were explored.The experimental and test results show that the Bi_(3.79)Er_(0.03)Yb_(0.18)Ti_(2.97)W_(0.03)O_(12)∶xSi phosphors prepared in different atmospheres are Bi_(4)Ti_(3)O_(12) phase with single layered perovskite like structure.Si is mainly Si^(4+)in the phosphor,indicating that even in the argon atmosphere,most of the doped Si is oxidized.Si doping increases the density and surface smoothness of the material,reduces the optical band gap and enhances the light absorption.Under 980 nm infrared light excitation,the upconversion emission spectra of all samples show three emission bands centered at 525 nm,545 nm,and 765 nm,respectively,corresponding to the electronic transitions in the Er^(3+)4f electron layer.The luminescence intensity and fluorescence lifetime of the sample doped with 6% Si mole fraction are about twice as that of the sample without doping Si,indicating that Si doping can significantly improve the photoluminescence performance of rare earth doped bismuth titanate based phosphors.

关 键 词：材料 上转换荧光 光吸收 光学带隙 荧光寿命 

分 类 号：TB34[一般工业技术—材料科学与工程]