端面抽运的正交直角棱镜腔激光器研究  

Research on an end-pumped orthogonal Porro prism cavity laser

作　　者：万玮华 郝培育[1] 滕云鹏[1] 李金全[1] 李毅[1] 郝海洋 WAN Weihua;HAO Peiyu;TENG Yunpeng;LI Jinquan;LI Yi;HAO Haiyang(Science and Technology on Electro-Optical Control Laboratory,Luoyang Institute of Electro-Optical Equipment,Aviation Industry Corporation of China,Luoyang 471000,China)

机构地区：[1]中国航空工业集团公司洛阳电光设备研究所光电控制技术重点实验室,洛阳471000

出　　处：《激光技术》2023年第5期600-605,共6页Laser Technology

摘　　要：为了获得结构紧凑、光束质量高、光轴稳定性好的机载激光辐射器,采用LD端面抽运构型与正交直角棱镜腔技术对该型激光器进行研究,基于琼斯矩阵理论分析了特殊波片实现调Q关门的原理,通过带曲率设计的直角棱镜腔镜,将腔型控制在大基模尺寸,并实验对比了正交偏振关门与特殊波片关门两种方式。结果表明,在正交偏振关门状态下,20 Hz的工作重频时获得了单脉冲能量72.2 mJ、光束质量M_(x)^(2)=8和M_(y)^(2)=6的激光输出;基于K9玻璃的直角棱镜材料,利用0.648λ波片进行调Q关门,在20 Hz的工作重频下,获得了单脉冲能量80 mJ、光束质量M_(x)^(2)=5.7和M_(y)^(2)=4.8的高光束质量输出,其中激光器在x与y方向上的发散角分别为1.65 mrad和1.35 mrad。这一结果对高性能小型化激光器的研发是有帮助的。In order to obtain an airborne laser radiator with compact structure,high beam quality and good optical stability,LD end-pumped configuration and orthogonal porro prism cavity technology were used to study this type of laser.Based on Jones matrix theory,the principle of realizing Q-switched with special wave-plate was analyzed,and the cavity was controlled to the large fundamental mode size through the design of Porro prism cavity mirror with suitable curvature.The results show that the laser output with single pulse energy of 72.2 mJ and beam quality of M_(x)^(2)=8 and M_(y)^(2)=6 can be obtained at 20 Hz repetition frequency under the condition of orthogonal polarization closed state.Based on the Porro prism material of K9 glass,0.648λwave-plate was used for Q-switched closed state.Under the working repetition frequency of 20 Hz,a high beam quality output with single pulse energy of 80 mJ,beam quality of M_(x)^(2)=5.7 and M_(y)^(2)=4.8 is obtained.The divergence angles of the laser in the x-and y-direction are 1.65 mrad and 1.35 mrad respectively.This result is helpful for the research and development of high performance miniaturized lasers.

关 键 词：激光器 光束质量 端面抽运 直角棱镜腔 电光调Q 

分 类 号：TN248.1[电子电信—物理电子学]