不同温度下JLNT-FET和IMNT-FET的模拟/射频特性  

Analog/RF Characteristics of JLNT-FET and IMNT-FET at Different Temperatures

作　　者：刘先婷 刘伟景 李清华 Liu Xianting;Liu Weijing;Li Qinghua(College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China;Radiawave Technologies Corporation Limited,Shenzhen 518172,China)

机构地区：[1]上海电力大学电子与信息工程学院,上海200090 [2]深圳锐越微技术有限公司,广东深圳518172

出　　处：《半导体技术》2023年第7期570-576,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(52177185;62174055)。

摘　　要：无结纳米管场效应晶体管(JLNT-FET)和反转模式纳米管场效应晶体管(IMNT-FET)因具有较好的驱动能力和对短沟道效应(SCE)卓越的抑制能力被广泛研究。基于Sentaurus TCAD数值模拟,分析了环境温度对JLNT-FET和IMNT-FET的模拟/射频(RF)特性的影响,对比研究了JLNT-FET和IMNT-FET由于掺杂浓度和传导方式不同导致的性能差异。结果表明,随着温度升高,载流子声子散射加剧,器件的寄生电容增加,导致器件的模拟/RF性能下降。体传导的JLNT-FET受到声子散射影响较小,所以其漏源电流受温度影响比表面传导的IMNT-FET小。另外,JLNT-FET的载流子迁移率受沟道重掺杂影响,导致其驱动能力和模拟/RF性能都比IMNT-FET差。研究结果对进一步优化这两类器件及其在电路中的应用具有一定的参考意义。Junctionless nanotube field-effect transistor(JLNT-FET)and inversion-mode nanotube field-effect transistor(IMNT-FET)have been widely studied for their better driving capability and excellent suppression of short-channel effect(SCE).The effects of ambient temperature on the analog/radio frequency(RF)characteristics of JLNT-FET and IMNT-FET were analyzed based on Sentaurus TCAD numerical simulations.The performance differences between JLNT-FET and IMNT-FET due to different doping concentrations and conduction modes were comparatively investigated.The results show that as the temperature increases,carrier phonon scattering intensifies and the parasitic capacitance of the device increases,leading to a decrease in the analog/RF performances of the device.The bulk-conducting JLNT-FET is less affected by phonon scattering,so its drain-source current is less affected by temperature than that of surface-conducting IMNT-FET.In addition,the carrier mobility of JLNT-FET is affected by channel heavy doping,resulting in worse driving capability and analog/RF performances of JLNT-FET than that of IMNT-FET.The study results can be references for further optimization of these two types of devices and their applications in circuits.

关 键 词：无结纳米管场效应晶体管(JLNT-FET) 反转模式纳米管场效应晶体管(IMNT-FET) 模拟/射频(RF)特性 环境温度 传导模式 

分 类 号：TN386[电子电信—物理电子学]