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作 者:高颖 Gao Ying(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2023年第7期611-616,共6页Semiconductor Technology
摘 要:针对GaAs肖特基二极管基倍频器输出功率低的问题,采用Y型结结构的波导功分器/功合器在倍频器子模块外部进行信号的合成,实现了输出功率的提升。设计实现了插入损耗低、幅度/相位一致性良好的Y型结结构的波导功分器/功合器。基于GaAs肖特基二极管单片工艺,研制了二倍频器子模块,以提高子模块的一致性并降低芯片结温。对波导功分器/功合器及二倍频子模块进行了装配和测试,测试结果表明,该外合成式二倍频器的工作频率为209~216 GHz,当输入功率大于600 mW时,在214 GHz频率下,峰值输出功率可达117 mW,转换效率达到18.5%,合成效率达86.5%。To address the low output power issue of the GaAs Schottky diode-based doubler,Yjunction waveguide power divider/combiner were adopted to synthesize the signal outside the frequency doubler submodules to improve the output power.Y-junction waveguide power divider/combiner with low insertion loss and good amplitude/phase consistency were designed and realized.The frequency doubler submodules were fabricated based on GaAs Schottky diode monolithic process to improve the consistency of submodules and reduce the chip junction temperature.The waveguide power divider/combiner and frequency doubler submodules were assembled and tested.The test results show that the external synthesis type frequency doubler can operate in 209-216 CHz.When the input power is above 600 mW,the peak output power can reach 117 mW with a conversion efficiency of 18.5%and a synthesis efficiency of 86.5%at the frequency of 214 GHz.
关 键 词:太赫兹(THz) 倍频器 功率合成器 Y型结 波导
分 类 号:TN771[电子电信—电路与系统]
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