锆酸铅基反铁电薄膜制备及储能行为研究  

Preparation and Energy Storage Behavior of Lead Zirconate Based Antiferroelectric Thin Films

作　　者：王敏 Wang Min(Zhongqing New Energy(Inner Mongolia)Co.,Ltd.,Baotou Inner Mongolia 014040,China)

机构地区：[1]中氢能源科技发展(内蒙古)有限公司,内蒙古包头014040

出　　处：《山西冶金》2023年第8期26-29,共4页Shanxi Metallurgy

摘　　要：采用溶胶-凝胶法在LaNiO_(3)/Si基底上成功制备了Pb_((0.97))La_((0.02))Zr_((0.97))Ti_((0.03))O_(3)反铁电薄膜,研究了薄膜厚度、底电极LaNiO3的结晶温度对PLZT(2/97/3)反铁电薄膜结构及性能的影响,着重考察了这类材料在反铁电-铁电相变过程中能量存储行为。利用XRD分析反铁电薄膜的结构、综合介电性能测试系统来分析反铁电薄膜电性能及铁电综合测试系统测试电滞回线及储能。结果表明:反铁电薄膜都为钙钛矿结构,在250~750 nm的薄膜中薄膜厚度越薄越利于反铁电薄膜的储能;底电极LaNiO_(3)的结晶温度越高(700~900℃),PLZT反铁电薄膜越利于能量的存储。Pb_((0.97))La_((0.02))Zr_((0.97))Ti_((0.03))O_(3) antiferroelectric thin films were successfully prepared on LaNiO3/Si substrates by sol-gel method.Using XRD to analyze the structure of antiferroelectric thin films and a comprehensive dielectric performance testing system to analyze the electrical properties of antiferroelectric thin films,as well as testing the hysteresis loop and energy storage of the ferroelectric comprehensive testing system.The results show that all antiferroelectric thin films have a perovskite structure,and the thinner the film thickness in the range of 250~750 nm,the more favorable the energy storage of the antiferroelectric thin film.The higher the crystallization temperature of the bottom electrode LaNiO_(3)(700~900℃),the more conducive the PLZT antiferroelectric thin film is to energy storage.

关 键 词：反铁电体 PLZT(2/97/3) 高能存储 

分 类 号：TK02[动力工程及工程热物理] TB383.2[一般工业技术—材料科学与工程]