用于车载激光雷达的高速窄脉冲栅极驱动器  

High Speed Narrow Pulse Gate Driver for Automotive Lidar

作　　者：贾东东 赵永瑞 师翔[1,2,3] 李军建 贾凯烨 史亚盼 Jia Dongdong;Zhao Yongrui;Shi Xiang;Li Junjiann;Jia Kaiye;Shi Yapan(North-China Integrated Circuit Co.,Ltd.,Shjiazhuang 050200,China;The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Key Laboratory of Radio Frequency Integrated Circuit for Mobile Communication in Hebei Province,Shijiazhuang 050200,China)

机构地区：[1]河北新华北集成电路有限公司,石家庄050200 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]河北省移动通信用射频集成电路重点实验室,石家庄050200

出　　处：《半导体技术》2023年第8期699-705,共7页Semiconductor Technology

摘　　要：针对车载激光雷达高频率、高精度的探测需求,提出了一种高速窄脉冲栅极驱动器,用于驱动激光雷达发射系统中的GaN HEMT开关管。基于0.18μm CMOS工艺进行驱动器的电路与版图设计,采用新型施密特触发器结构,并集成欠压锁存和过温保护功能。该驱动器选用晶圆级芯片封装(WLCSP)技术,最大程度上降低栅极路径上的寄生电感。对芯片进行测试,结果表明:驱动器最小输出脉冲宽度为1.06 ns,其上升时间为480 ps,下降时间为380 ps,输入信号到输出信号的延迟时间为3 ns,脉冲频率最高可达60 MHz。该驱动器具有脉宽窄、延时短、频率高、体积小等特点,可应用于车载激光雷达系统。To meet the high frequency and high precision detection requirements of automotive lidar,a high speed narrow pulse gate driver was proposed to drive GaN HEMT switches in lidar launching system.The circuit and layout of the driver were designed based on O.18μm CMOS process,the new Schmitt trigger structure was adopted,and undervoltage latch and over temperature protection functions were integrated.The wafer level chip scale packaging(WLCSP)technology was used in the driver,which minimized the parasitic inductance on the gate path.The chip test results show that the minimum output pulse width of the driver is 1.06 ns,the rise time is 480 ps,the fall time is 380 ps,the delay time from input signal to output signal is 3 ns,and the pulse frequency is up to 60 MHz.The driver has the characteristics of narrow pulse width,short delay,high frequency and small size,and can be applied to automotive lidar system.

关 键 词：窄脉冲 高速栅极驱动器 GaN HEMT 晶圆级芯片封装(WLCSP) 车载激光雷达 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN784.1