逆向设计的硅基片上功率分束器  

Inverse-designed silicon-based on-chip power splitters

作　　者：马汉斯 杜特 姜鑫鹏 杨俊波 Ma Hansi;Du Te;Jiang Xinpeng;Yang Junbo(Center of Material Science,National University of Defense Technology,Changsha,Hunan 410073,China;Institute for Quantum Information&State Key Laboratory of High Performance Computing,College of Computer,National University of Defense Technology,Changsha,Hunan 410073,China)

机构地区：[1]国防科技大学物质与材料科学实验中心,湖南长沙410073 [2]国防科技大学计算机学院量子信息研究所和高性能计算国家重点实验室,湖南长沙410073

出　　处：《光电工程》2023年第7期1-18,共18页Opto-Electronic Engineering

基　　金：国家自然科学基金项目(60907003,61805278,12272407,62275269,62275271);国家重点研发计划项目(2022YFF0706005);中国博士后科学基金(2018M633704);国防科技大学基金(JC13-02-13,ZK17-03-01);湖南省自然科学基金项目(13JJ3001);新世纪高校优秀人才计划(NCET-12-0142)。

摘　　要：硅基片上功率分束器是光子集成电路的重要组成,具有广泛的应用,比如反馈电路、抽头功率监测和光学量化等。纳米光子器件的设计方法大致可以分为正向设计方法和逆向设计方法。本文概述了正向设计方法和逆向设计方法的区别与联系,并且对逆向设计算法进行了归纳分类,此外,总结了近年来具有代表性的逆向设计的硅基片上功率分束器,包括多通道功率分束器、任意分束比功率分束器、多模式功率分束器、宽带功率分束器和多功能功率分束器,最后对逆向设计算法以及逆向设计的功率分束器的发展趋势进行了总结与展望。The silicon-based on-chip power splitter,an important component of the photonic integrated circuits,has much wider scope of applications such as feedback circuits,tap-port power monitoring,and optical quantization.The design methods of the nanophotonic devices can be roughly divided into the forward design and inverse design methods.This review article outlines the differences and connections between the forward design and inverse design methods,and classifies the inverse design algorithms.In addition,the review article summarizes the representative inverse-designed silicon-based on-chip power splitters in recent years,including multichannel power splitters,arbitrary-split-ratio power splitters,multimode power splitters,broadband power splitters,and multifunction power splitters.Finally,the summary and outlook are made on the development trend of the inverse design algorithms and the inverse-designed power splitters.

关 键 词：硅基片上功率分束器 逆向设计方法 多通道功率分束器 任意分束比功率分束器 多模式功率分束器 宽带功率分束器 多功能功率分束器 

分 类 号：TN491[电子电信—微电子学与固体电子学]