基于200 mm硅基GaN的单色Micro LED微显示芯片制备及量产难点分析  

Preparation of Monochrome Micro LED Microdisplay Chip Based on 200 mm Silicon-based GaN and Analysis of its Batch Production Difficulties

作　　者：彭劲松 杨建兵 殷照 汪曾峰 宋琦 吴焱 PENG Jinsong;YANG Jianbing;YIN Zhao;WANG Zengfeng;SONG Qi;WU Yan(Nanjing Guozhao Optoelectronic Technology Co.,LTD.,Nanjing 210016,CHN;The 55th Re-search Institute of China Electronics Technology Group Corporation,Nanjing 210016,CHN)

机构地区：[1]南京国兆光电科技有限公司,南京210016 [2]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《光电子技术》2023年第2期129-132,共4页Optoelectronic Technology

摘　　要：应用200 mm硅基GaN外延片,研究晶圆级键合、薄膜转移和微小尺寸像素制备等技术,实现了Micro LED微显示阵列的点亮与显示功能。相对于传统蓝宝石基GaN外延晶圆,200 mm硅基GaN外延晶圆与硅基驱动晶圆尺寸更匹配,有利于通过晶圆键合工艺实现低成本量产。同时对工艺量产的难点和解决思路进行了分析,指出显示缺陷是目前亟待解决的问题。Using 200 mm silicon-based GaN epitaxial wafers,wafer-level bonding,thin film transferring and micro-size pixel preparation were studied,and the lighting and display functions of Mi-cro LED microdisplay array were realized.Compared with traditional sapphire-based GaN epitaxial wafers,200 mm silicon-based GaN epitaxial wafers were more compatible with silicon-based drive wafer sizes,which was conducive to low-cost batch production through wafer bonding process.At the same time,the difficulties and ideas of batch production were analyzed,and it was pointed out that the defect was a problem that needed to be solved urgently.

关 键 词：发光二极管微显示芯片 硅基氮化镓外延片 显示缺陷 

分 类 号：TN405[电子电信—微电子学与固体电子学]