一款BiCMOS工艺的低附加相移衰减器  

A low additional phase shift attenuator for BiCMOS process

作　　者：张超 陈奇超 叶乔霞 高海军[1] ZHANG Chao;CHEN Qichao;YE Qiaoxia;GAO Haijun(Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2023年第4期14-20,共7页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：采用0.18μm BiCMOS工艺,设计了一款工作频率为17~42 GHz的5位低附加相移、超宽带衰减器。小衰减单元采用简化的T型衰减结构,大衰减单元采用π型衰减结构,且每个衰减单元均采用电容和电阻并联的方式对附加相移进行补偿。测试结果表明,在17~42 GHz频带范围内,该衰减器的衰减动态范围为0~20 dB,衰减步进为0.5 dB,衰减误差均方根小于0.5 dB,附加相移为-1.25°~1.00°,芯片尺寸为220μm×95μm。Based on 0.18μm BICMOS technology,a 5-bit high precision,low additive phase shift,ultra-wideband stepping attenuator is designed and implemented.The dynamic attenuation range of the attenuator is 20 dB.The small attenuator adopts the simplified T-type attenuation structure,and the large attenuator adopts the bridge T-type attenuation network,and each attenuator adopts the capacitor phase shift compensation network,which effectively reduces the additional phase shift of the attenuator.Testing results show that the attenuation step of the attenuator is 0.5 dB,the root mean square error(RMS)is less than 0.5 dB,and the additional phase shift is-1.25°~1.00°.The chip size is 0.22 mm×0.95 mm.

关 键 词：衰减器 低附加相移 相移补偿网络 

分 类 号：TN432[电子电信—微电子学与固体电子学]