Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique  

作　　者：Bassam Abdallah Fareza Nasrallah Asmahan Obied 

机构地区：[1]Department of Physics,Atomic Energy Commission,P.O.Box 6091,Damascus,Syria

出　　处：《Optoelectronics Letters》2023年第6期347-352,共6页光电子快报（英文版）

摘　　要：Thin films Bi_(4)Ti_(3)O_(12)(BLT) were deposited using electron beam evaporation on silicon substrate at several times,also on AlN/Si and SiO_(2)/Si substrates.Thin films morphology and thickness were measured via scanning electron microscopy(SEM).The crystallography was studied using X-ray diffraction(XRD) technique for films which have a(0010) preferred orientation in all substrate types.The capacitance values were contingent on frequency value in C-V measurement.The ferroelectric characterization was investigated for BLT film deposited on isolator layer(SiO_(2) or AlN) for Al/Bi_(4)Ti_(3)O_(12)/SiO_(2)/Si devices.Memory effect value varied from 1 V to 3 V depending on the thin films isolator on substrate.

关 键 词：BEAM FILMS FERROELECTRIC 

分 类 号：TB383.2[一般工业技术—材料科学与工程]