Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes  

作　　者：张涛 李若晗 苏凯 苏华科 吕跃广 许晟瑞 张进成 郝跃 Tao Zhang;Ruo-Han Li;Kai Su;Hua-Ke Su;Yue-Guang Lv;Sheng-Rui Xu;Jin-Cheng Zhang;Yue Hao(Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Xi'an Microelectronics Technology Institute,Xi'an 710054,China;School of Aerospace Science and Technology,Xidian University,Xi'an 710071,China)

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China [2]Xi'an Microelectronics Technology Institute,Xi'an 710054,China [3]School of Aerospace Science and Technology,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2023年第8期404-408,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.62104185);the Fundamental Research Funds for the Central Universities,China(Grant No.JB211103);the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61925404);the Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation,China(Grant No.XWYCXY-012021010)。

摘　　要：Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons.Furthermore,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated devices.The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.

关 键 词：AlGaN/GaN SBDs GaN passivation layer proton irradiation dynamic on-resistance 

分 类 号：TN311.7[电子电信—物理电子学]