一种宽带输入和性能可调的低噪声放大器的设计  

Design of A Low Noise Amplifier With Wide Band Input and Adjustable Performance

作　　者：熊绍刚[1] 吕丽平[2] XIONG Shaogang;LÜLiping(Commercial College,Xiangyang Ploytechnic,Xiangyang Hubei 441050,China;School of Information Engineering,Shengda Economics Trade&Management College of Zhengzhou,Zhengzhou He’nan 451191,China)

机构地区：[1]襄阳职业技术学院商学院,湖北襄阳441050 [2]郑州升达经贸管理学院信息工程学院,河南郑州451191

出　　处：《电子器件》2023年第4期906-913,共8页Chinese Journal of Electron Devices

基　　金：国家自然科学基金面上项目(61272527);河南省科技厅自然科学基金项目(152102210261)。

摘　　要：提出了一种宽调谐范围的性能可调低噪声放大器。它由2级构成,第一级以宽带输入匹配和低噪声放大为主,采用一种新的开关电感结构来获得宽范围的频率调谐,而增益和噪声系数保持在相同的水平;第二级为具有性能可调的宽调谐范围限带增益响应,通过偏置控制和晶体管尺寸切换来实现;最后,基于提出的技术,采用0.12μm CMOS制作工艺,实现了一种2.3 GHz~5.5 GHz的CMOS低噪声放大器。在1.1 V电源电压下,具有包括高达24.8 dB的功率增益、低于3.0 dB的噪声系数和小于4.5 mW功耗的性能,无焊盘核心电路仅占0.4 mm2的芯片面积。A low noise amplifier with adjustable performance in a wide tuning range is proposed.It consists of two stages.The first stage is mainly wideband input matching and low noise amplification.A new switching inductance configuration is used to obtain a wide range of frequency tuning,while gain and noise figure are maintained at the same level.The second stage is a wide tuning range band-limited gain response with adjustable performance,which is realized by bias control and transistor size switching.Finally,based on the proposed technology,a 2.3 GHz-5.5 GHz CMOS low noise amplifier is implemented by using 0.12μm CMOS fabrication process.The perform-ance of the proposed low noise amplifier includes power gain of up to 24.8 dB,noise figure of less than 3.0 dB and power consumption of less than 4.5 mW at 1.1 V power supply voltage.The core circuit without pads occupies only 0.4 mm2 chip area.

关 键 词：多标准无线电 宽调谐范围 低噪声放大器 双无功反馈 开关电感 性能可调 频率响应 

分 类 号：TN402[电子电信—微电子学与固体电子学]