一种高集成低辐射的隔离DC-DC变换器  

A high integration isolated DC-DC converter with low radiated emissions

作　　者：杨靖 马春宇[1,2] 孙瑞亭 张峰 费健[1,2] YANG Jing;MA Chunyu;SUN Ruiting;ZHANG Feng;FEI Jian(National ASIC Design Engineering Center,Institute of Automation,Chinese Academy of Sciences,Beijing 100190,China;Analog Circuit Development Center,Beijing GL-Microelectronics Technology Co.,Ltd,,Beijing 100190,China)

机构地区：[1]中国科学院自动化研究所,国家专用集成电路设计工程技术研究中心,北京100190 [2]北京中科格励微科技有限公司模拟开发中心,北京100190

出　　处：《微电子学与计算机》2023年第9期114-118,共5页Microelectronics & Computer

摘　　要：通过MEMS工艺与0.18 um BCD工艺的深度融合,设计了一种基于片上变压器的两芯片集成式隔离DCDC变换器.该隔离DC-DC变换器隔离耐压5 kVrms,输入电压为3 V-5.5 V,输出电压3.3 V/5 V,峰值效率和最大输出功率分别为29%和0.5 W,SOP-8封装,体积为7.67 mm*5.8 mm*1 mm.采用随机跳频技术,通过5-bit跳频模块控制振荡器的谐振频率在145 MHz-195 MHz范围内随机切换,从而降低其电磁辐射,测试表明辐射峰值最大降低25 dBuV.Based on MEMS and 0.18 um BCD process,an isolated DC-DC converter using 5-kVrms integrated on-chip transformer is proposed.The converter is made up of only two silicon dice,which improves integration and reduces cost.The proposed dc–dc converter delivers up to 0.5 W output power with 29%maximum power efficiency in a compact 7.67 mm*5.8 mm*1 mm SOP-8 package,and its input voltage is 3 V-5.5 V,output voltage is 3.3 V/5 V.In order to control radiated emissions,the random frequency hopping technology is used to control oscillator’s resonant frequency ranging from 145 MHz to 195 MHz through 5-bit hopping.A 25 dBuV reduction of maximum harmonic peak value is achieved.

关 键 词：自适应栅极控制 高度集成 随机跳频 隔离DC-DC变换器 

分 类 号：TN335[电子电信—物理电子学]